Shift Register Magnetic Memory Using Piezoelectric Magnetization Rotation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Shift register type magnetic memories face challenges in reliably transferring information across a large number of bits due to the physical length of the shift register and blunting of current pulse waveforms, leading to potential false operations, especially when handling information of over a hundred bits.
Innovation Solution
A magnetic memory design incorporating a magnetic nanowire surrounded by a chain of disk-shaped ferromagnetic films, with a magnetization rotation drive unit using piezoelectric materials to rotate the magnetization of the ferromagnetic films, allowing for precise control and reliable bit shifting without the need for individual control electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a current pulse is used to conduct bit shift in shift register type magnetic memory, then the shift operation can be performed, but the current pulse waveform becomes blunted due to capacitance or inductance components, leading to false operations
Solution Approach 1:
The patent replaces the electrical current pulse system with a magnetic field system. Specifically, it uses a magnetic wall (domain wall) that moves along the magnetic nanowire in response to an external magnetic field applied to the ferromagnetic films. This magnetic field-based control eliminates the waveform blunting issue inherent in electrical current pulses while maintaining the ability to perform shift operations reliably across large numbers of bits
Solution Approach 2:
The patent introduces a magnetic nanowire as an intermediary carrier between the control magnetic field and the stored information. The magnetic wall moves along this nanowire, transferring information from one location to another. This intermediary mechanism provides reliable information transfer without being affected by electrical capacitance or inductance issues
2Quantity of substance
If the physical length of the shift register is increased to handle more bits, then the memory capacity increases, but the possibility of false operation increases due to current pulse waveform blunting
Solution Approach 1:
The patent substitutes the electrical current pulse mechanism with a magnetic field-driven magnetic wall movement mechanism. This substitution allows the system to scale to longer shift registers with more bits without suffering from waveform blunting, as magnetic fields do not exhibit the same capacitance and inductance effects that degrade current pulse integrity over long distances
3Reliability
If a magnetic wall is moved by an external magnetic field in a shift register type magnetic memory, then information can be transferred without fail, but a control electrode is required for each bit which increases device complexity
Solution Approach 1:
The patent merges the control function for multiple bits into a single unified magnetic field application mechanism. By using ferromagnetic films that can be magnetized by an external magnetic field, the system can control the movement of magnetic walls across multiple bit positions simultaneously or sequentially without requiring individual control electrodes for each bit, thus reducing overall device complexity while maintaining reliable information transfer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables reliable and efficient shifting of magnetization information across multiple bits, reducing power dissipation and increasing memory capacity while maintaining high reliability and low power consumption.
Implementation Method 1
a magnetization rotation drive unit configured to rotate and drive magnetization of the plurality of ferromagnetic films
Data Source
AI summary
A shift register type magnetic memory according to an embodiment includes: a magnetic nanowire; a magnetic material chain provided in close vicinity to the magnetic nanowire, the magnetic material chain including a plurality of disk-shaped ferromagnetic films arranged along a direction in which the magnetic nanowire extends; a magnetization rotation drive unit configured to rotate and drive magnetization of the plurality of ferromagnetic films; a writing unit configured to write magnetic information into the magnetic nanowire; and a reading unit configured to read magnetic information from the magnetic nanowire.