Shift Register Leakage Blocking with Oxide Transistors

The patent applies different transistor types in different circuit locations: LTPS TFTs are used in switching positions where high speed is needed, while oxide semiconductors are used in positions requiring low leakage current for stable potential maintenance. This local differentiation resolves the contradiction by optimizing each position's transistor type according to its specific functional requirements.

The shift register circuit employs a composite transistor architecture combining LTPS TFT and oxide semiconductor TFT technologies. The LTPS TFT provides fast switching action while the oxide semiconductor TFT provides low leakage current characteristics, creating a hybrid system that achieves both high speed and stable node potentials simultaneously.

The oxide semiconductor transistor serves multiple functions: it acts as both a switching element and a leakage blocking element. By making the transistor multi-functional, the circuit achieves stable node potentials without adding separate dedicated leakage blocking components, thus avoiding increased device complexity.

The patent merges the leakage blocking function with the existing transistor structure by using the oxide semiconductor transistor's inherent low leakage properties. Instead of adding separate leakage prevention circuits, the design combines the switching and leakage blocking functions into a single transistor component, maintaining circuit simplicity.