Shift Register Voltage Margin Boost for High Temperature Stability

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Solution Overview

Problem

In high temperature environments, the increased carrier mobility of thin film transistors in gate driving circuits leads to voltage drops at the pulling-down node, causing a splash screen problem due to insufficient voltage margin, which prevents correct clock signal output and normal operation of pixel transistors.

Innovation Solution

A shift register design with a voltage regulating sub-circuit that includes transistors and capacitors (2T1C) to boost the gate voltage of transistors, reducing internal resistance and increasing the voltage margin at the pulling-down node, thereby maintaining operation even in high temperature conditions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If thin film transistors operate in high temperature environment, then carrier mobility increases, but voltage margin at pulling-down node decreases causing splash screen problem

Engineering Contradiction:
Improveoperation stabilityVSAvoidtemperature
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent changes the electrical parameters of the transistor by adjusting its aspect ratio (width-to-length ratio). By increasing the aspect ratio of the transistor at the pulling-down node, the patent compensates for the increased carrier mobility at high temperatures, thereby maintaining sufficient voltage margin and preventing the splash screen effect.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If transistor aspect ratio is increased to maintain voltage margin, then internal resistance decreases, but device area increases

Engineering Contradiction:
Improvevoltage marginVSAvoidtransistor area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent applies local quality by selectively adjusting the aspect ratio of specific transistors at critical nodes (pulling-down node and pulling-down controlling node) rather than uniformly scaling all transistors. This targeted approach maintains voltage margin where needed while minimizing the overall area increase of the shift register circuit.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS11094245B2Shift register, driving method thereof, gate driving circuit and display device
Publication Date: 2021.08.17 HEFEI BOE OPTOELECTRONIC TECH CO LTD
  • US11094245B2 patent drawing
  • US11094245B2 patent drawing
  • US11094245B2 patent drawing

AI summary

Embodiments of the present disclosure propose a shift register, a driving method thereof, a gate driving circuit, and a display device. The shift register includes: an inputting sub-circuit, an outputting sub-circuit, a resetting sub-circuit, a pulling-down sub-circuit, a pulling-down controlling sub-circuit, and a voltage regulating sub-circuit. The voltage regulating sub-circuit is coupled to a pulling-down node, a pulling-down controlling node, a second clock signal terminal, a third clock signal terminal, a first voltage signal terminal and a second voltage signal terminal, and is configured to regulate a voltage at the pulling-down controlling node based on a first voltage signal from the first voltage signal terminal and a second voltage signal from the second voltage signal terminal, under a control of the second clock signal from the second clock signal terminal, a third clock signal from the third clock signal terminal, and the voltage at the pulling-down node.