Shorted P-N Junction Waveguide Free Carrier Removal

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Solution Overview

Problem

High optical power in waveguides can cause heating, frequency shifts, hysteresis, and stability issues due to free carrier generation, which existing methods address inadequately, particularly in ring resonators and tunable lasers.

Innovation Solution

A shorted p-n junction is created around the waveguide by electrically connecting p++ and n++ doped semiconductors, eliminating the need for external voltage to sweep out free carriers, thereby reducing heating and nonlinearity without additional electronics or power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If external voltage is applied to sweep out free carriers, then free carrier removal is improved, but device complexity and power consumption increase

Engineering Contradiction:
Improvefree carrier removalVSAvoidexternal electronics
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The p-n junction structure automatically sweeps out free carriers through its internal electric field without requiring external voltage control. The junction self-regulates the free carrier density in the waveguide by collecting carriers through the depletion region, eliminating the need for external electronics while maintaining reliable free carrier removal

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The harmful free carriers are extracted from the waveguide through the p-n junction's depletion region. The junction acts as a carrier collection mechanism that removes excess carriers generated by two-photon absorption, separating the carrier management function from the optical waveguide function

Inventive Principle:
Principle #2Taking out (Extraction)

2Reliability

If external voltage is applied to sweep out free carriers, then free carrier removal is improved, but heating increases

Engineering Contradiction:
Improvefree carrier removalVSAvoidheating
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The p-n junction utilizes its built-in electric field from the p-n doping profile to sweep out carriers without requiring external power supply. This eliminates the resistive heating that would occur in external voltage applications, as no continuous power is consumed to maintain the carrier-sweeping function

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The external electrical control system is replaced with a passive p-n junction structure that relies on diffusion and drift mechanisms driven by the internal electric field. This substitution eliminates the need for active power delivery and associated heating while maintaining effective carrier removal

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Power

If high optical power is used, then laser performance is improved, but nonlinear effects increase

Engineering Contradiction:
Improveoptical powerVSAvoidnonlinear effects
Core Design Contradiction:
PowerVSObject-generated harmful factors

Solution Approach 1:

The p-n junction converts the harmful effect of two-photon absorption into a beneficial outcome. Instead of allowing generated free carriers to cause harmful nonlinear effects and heating, the junction collects these carriers through its depletion region, transforming the harmful carrier accumulation into a useful carrier collection mechanism that actually improves laser performance at high powers

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively removes free carriers, reducing heating and instability in waveguides and ring resonators, enhancing the performance of high-power lasers and tunable lasers by minimizing nonlinear effects and power consumption.

Implementation Method 1

absorption due to high optical power may generate free electrons and holes (free carriers) which may lead to more optical absorption if the free carriers were not removed or recombined

Methodology Applied
Scientific EffectFree carrier absorption: Absorption (EM radiation)

Implementation Method 2

when high optical power is sent into a waveguide, there may be two-photon absorption

Methodology Applied
Scientific EffectTwo-photon absorption: Absorption (EM radiation)

Data Source

PatentUS10554014B1Shorted p-n junction
Publication Date: 2020.02.04 ACACIA TECH INC
  • US10554014B1 patent drawing
  • US10554014B1 patent drawing
  • US10554014B1 patent drawing

AI summary

A method and apparatus for removing free carriers from a waveguide using a p type semiconductor and an n type semiconductor connected by a short.