Shower Head Ceiling Plate Temperature Control via RF Power and Pressure Feedback
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Solution Overview
Problem
Existing plasma processing apparatuses face challenges in accurately controlling the temperature of the ceiling plate in the shower head due to variations in RF power and gas diffusion space pressure, leading to inconsistencies in deposition amounts during plasma processing.
Innovation Solution
A plasma processing apparatus with a temperature adjustment mechanism that includes a coolant flow path in the shower head, where a controller acquires parameters related to plasma generation and pressure, estimates the ceiling plate temperature, and adjusts the coolant flow to maintain a target temperature, ensuring accurate temperature control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a coolant flow path is provided in the base member to control the temperature of the ceiling plate, then the temperature control capability is improved, but the temperature control accuracy deteriorates due to variations in RF power and gas diffusion space pressure
Solution Approach 1:
The system performs preliminary actions by acquiring RF power and pressure data before temperature estimation, and pre-stores the relationship between these parameters and ceiling plate temperature in a lookup table. This allows the controller to proactively estimate and adjust temperature before actual temperature deviations occur, improving control accuracy despite the simple coolant flow path structure.
Solution Approach 2:
The system implements a feedback mechanism where the controller continuously monitors RF power and pressure parameters, estimates the ceiling plate temperature based on these inputs, and adjusts the coolant flow accordingly. This closed-loop feedback compensates for parameter variations and maintains accurate temperature control without requiring complex hardware modifications.
2Manufacturing precision
If the temperature of the ceiling plate is kept constant to adjust the deposition amount, then the deposition uniformity is improved, but the device complexity increases due to additional temperature control mechanisms
Solution Approach 1:
The system changes operational parameters (coolant flow rate) based on varying conditions (RF power and pressure) rather than maintaining a fixed control mechanism. By adjusting the coolant flow parameter dynamically, the system achieves consistent ceiling plate temperature and uniform deposition without requiring complex additional hardware, thus improving deposition uniformity while avoiding excessive device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for precise control of the ceiling plate temperature, maintaining consistency and improving the accuracy of plasma processing by compensating for changes in RF power and pressure, thereby enhancing the uniformity of the deposition process.
Implementation Method 1
a coolant flow path provided in the shower head to control the temperature of the ceiling plate
Implementation Method 2
a coolant flow path provided in the shower head to control the temperature of the ceiling plate
Implementation Method 3
applying a radio frequency (RF) power to generate plasma of the processing gas
Data Source
AI summary
A plasma processing apparatus includes: a shower head including a ceiling plate having a plurality of gas holes, and a base member having a space so as to supply the processing gas to the plurality of gas holes; a temperature adjustment mechanism provided in the shower head; an acquisition unit configured to acquire a combination of a plasma parameter and pressure in the space in the base member; an estimation unit configured to estimate temperature of the ceiling plate corresponding to the acquired combination of the parameter and the pressure with reference to temperature information indicating the temperature of the ceiling plate corresponding to the combination of the parameter and the pressure; and a temperature controller configured to control the temperature adjustment mechanism such that the estimated temperature of the ceiling plate becomes target temperature when a plasma processing is performed.