Shower Head Slit Layout for Uniform Substrate Gas Distribution
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in achieving efficient gas replacement and uniform gas distribution within the shower head, which affects the quality of film formation and processing treatments on substrates.
Innovation Solution
The substrate processing apparatus incorporates a shower head design with a quadruple pipe configuration, featuring interconnected slits and hollow portions that facilitate precise control of gas flow and distribution, enhancing gas replacement efficiency and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a conventional shower head design is used, then the structure is simple, but gas replacement efficiency and gas uniformity are insufficient
Solution Approach 1:
The shower head is divided into multiple functional regions with different gas ejection structures: a central region with a first gas ejection hole, an intermediate region with a second gas ejection hole, and an outer region with a third gas ejection hole. This segmentation allows different gas flows to be controlled independently in different zones, improving gas replacement efficiency and uniformity without requiring complete structural redesign.
Solution Approach 2:
Different regions of the shower head are assigned different gas ejection characteristics tailored to their specific needs. The central region uses a first gas ejection hole configuration, the intermediate region uses a second gas ejection hole configuration, and the outer region uses a third gas ejection hole configuration. This local optimization ensures uniform gas distribution across the entire substrate surface while maintaining a relatively simple overall structure.
2Manufacturing precision
If gas flow is increased to improve film formation quality, then film uniformity improves, but gas distribution uniformity within the shower head deteriorates
Solution Approach 1:
The gas supply system is made dynamically controllable by providing multiple independently adjustable gas ejection holes with different flow characteristics. The gas flow rates through the first, second, and third gas ejection holes can be independently regulated, allowing the system to adapt to different processing requirements while maintaining uniform gas distribution and high film formation quality.
Solution Approach 2:
The gas ejection parameters (hole diameter, shape, orientation, and flow rate) are varied across different regions to optimize gas distribution. By changing these parameters locally in different shower head zones, the system achieves both high film formation quality and uniform gas distribution, resolving the contradiction between film quality and gas uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves gas uniformity and efficiency within the shower head, leading to more consistent film formation and processing treatments on substrates, such as semiconductor wafers.
Implementation Method 1
Chemical vapor deposition (CVD) is known as one of deposition methods of forming thin films. This method is a method of supplying a material gas containing components of a targeting thin film on a substrate and decomposing the material gas by energy or the like of heat or plasma to deposit a metal thin film or a compound thin film on the surface of the substrate.
Implementation Method 2
a first slit coupled to the first hollow portion and extending in a first direction, a second slit coupled to the first slit and extending in a second direction intersecting the first direction and a third direction intersecting the first and second directions, a third slit coupled to the second slit and extending in the first direction
Data Source
AI summary
A substrate processing apparatus includes: a substrate holder configured to hold a substrate; a shower head including a first hollow portion, a first slit coupled to the first hollow portion and extending in a first direction, a second slit coupled to the first slit and extending in a second direction intersecting the first direction and a third direction intersecting the first and second directions, a third slit coupled to the second slit and extending in the first direction, and a plurality of first gas ejection holes coupled to the first hollow portion, the shower head facing the substrate holder; a pipe structure including a first pipe coupled to the third slit; and a gas supplier connected to the first pipe and configured to supply a gas to the substrate from the plurality of first gas ejection holes.