Shower Head Gas Guide for Semiconductor Substrate Processing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor device manufacturing, the formation of films with good step coverage in high-aspect-ratio grooves is challenging due to gas diffusion issues in substrate processing apparatuses, leading to adhered materials that affect substrate characteristics and yield.
Innovation Solution
A substrate processing apparatus with a buffer chamber and gas guide configuration that separates process and inert gas supply regions, using a gas guide with a circumferential base end connected to the ceiling and an inert gas supply hole on the outer side to prevent gas mixing and adherent formation, along with controlled gas flow rates to ensure uniform film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a common buffer space is used for multiple gas supply systems, then device complexity is reduced, but remnant gases react with each other causing adhered materials to deposit on the shower head
Solution Approach 1:
The buffer chamber is segmented into multiple independent buffer spaces, each dedicated to a specific gas supply system. This prevents remnant gases from different processes from mixing and reacting, thereby eliminating adhered materials deposition while maintaining a relatively simple overall structure.
Solution Approach 2:
A partition wall with a communication hole serves as an intermediary structure between different buffer spaces. This allows controlled gas flow between spaces when needed while maintaining physical separation to prevent unwanted reactions, resolving the contradiction between simplicity and preventing harmful deposits.
2Manufacturing precision
If a gas guide is installed in the buffer chamber to prevent gas diffusion toward the exhaust port, then gas supply uniformity is improved, but the structure becomes more complex and maintenance becomes burdensome
Solution Approach 1:
The partition wall with communication holes provides localized gas flow control where needed, rather than requiring a complex gas guide structure throughout the entire buffer chamber. This achieves uniform gas supply through targeted local modifications.
Solution Approach 2:
The partition wall serves multiple functions: it separates different gas buffer spaces to prevent reactions, controls gas flow directions, and maintains pressure differentials. This multi-functionality reduces the need for additional specialized components like complex gas guides.
3Productivity
If a large amount of purge gas is supplied to exhaust remnant gases quickly, then process time is reduced, but gas consumption increases and cost increases
Solution Approach 1:
The communication holes in the partition wall enable selective extraction and removal of remnant gases from specific buffer spaces before the next process gas is supplied. This prevents the need for large amounts of purge gas by efficiently removing only the necessary remnant gases.
Solution Approach 2:
The buffer chamber exhaust unit continuously operates to maintain low pressure and remove gases, while the partition structure enables continuous efficient purging of remnant gases from individual buffer spaces. This continuous action reduces total process time without requiring excessive purge gas amounts.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively inhibits the generation of adhered materials above the gas guide, ensuring uniform substrate characteristics and improved yield by maintaining gas separation and efficient gas removal.
Implementation Method 1
a gas guide is installed between the exhaust port for exhausting the buffer space and a supply hole for supplying the two gases and the purge gas
Implementation Method 2
a buffer chamber installed above the process chamber, the buffer chamber including a dispersion unit configured to uniformly supply gases into the process chamber
Implementation Method 3
an exhaust port is preferably installed in a buffer chamber to efficiently remove the remnant gases from the buffer chamber
Data Source
AI summary
Generation of adhered materials in a space over a gas guide of a shower head is inhibited. A substrate processing apparatus includes a process chamber; a buffer chamber including a dispersion unit; a process gas supply hole installed in a ceiling portion of the buffer chamber; an inert gas supply hole installed in the ceiling portion; a gas guide disposed in a gap between the dispersion unit and the ceiling portion, the gas guide including a base end portion disposed at a side of the process gas supply hole, a leading end portion disposed closer to the inert gas supply hole than to the process gas supply hole, and a plate portion connecting the base end portion and the leading end portion; a process chamber exhaust unit; and a control unit.