Shower Head Plasma Cleaning Without Metal Contamination

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Solution Overview

Problem

Metal contamination occurs in the shower head unit of plasma reaction chambers during semiconductor manufacturing processes due to exposure to plasma.

Innovation Solution

A substrate processing apparatus is designed with a lower electrode inside a support unit, where the voltage applied to the lower electrode is greater than the voltage applied to the upper electrode above the shower head unit, preventing metal contamination by plasma.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a shower head is exposed to plasma for cleaning process, then cleaning effectiveness is improved, but metal contamination occurs in the shower head holes

Engineering Contradiction:
Improvecleaning effectivenessVSAvoidmetal contamination
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

Instead of applying plasma from the upper electrode to clean the shower head (which causes metal contamination), the patent inverts the approach by applying a higher voltage to the lower electrode. This reverses the plasma generation direction, causing ions to be accelerated upward away from the shower head holes, thus preventing metal contamination while maintaining cleaning effectiveness

Inventive Principle:
Principle #13The other way round (Inversion)

Solution Approach 2:

The patent changes the voltage parameter distribution by applying a higher voltage to the lower electrode compared to the upper electrode. This parameter change alters the plasma behavior and ion acceleration direction, solving the contamination problem while preserving the cleaning function

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively prevents metal contamination in the shower head unit, ensuring cleaner plasma processes and reducing the risk of substrate defects during semiconductor manufacturing.

Implementation Method 1

processing a substrate by using plasma

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 2

supplying a voltage of a first magnitude to the first electrode and supplying a voltage of a second magnitude greater than the first magnitude to the second electrode

Methodology Applied
Scientific EffectElectrical discharge: Electric Spark

Data Source

PatentUS12227838B2Substrate processing apparatus and substrate processing method using same
Publication Date: 2025.02.18 SYSTEM ENGINEERING MEGA SOLUTION CO LTD
  • US12227838B2 patent drawing
  • US12227838B2 patent drawing
  • US12227838B2 patent drawing

AI summary

A method of processing a substrate is provided. The method processes a substrate by using a substrate processing apparatus including a chamber, a shower head unit for supplying a cleaning gas into the chamber, a first electrode disposed on an upper portion of the shower head unit, a support unit for supporting the substrate, and a second electrode disposed inside the support unit, the method including supplying the cleaning gas into the chamber, and supplying a voltage of a first magnitude to the first electrode and supplying a voltage of a second magnitude greater than the first magnitude to the second electrode.