Shower Head Coating to Prevent Plasma Etching in Semiconductor Chambers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor manufacturing, the continuous exposure of shower heads to plasma leads to etching of the surface, increasing the volume of the processing space and altering the size of gas supply holes, resulting in damage and reduced performance.
Innovation Solution
A semiconductor manufacturing facility is designed with a substrate processing apparatus that includes a chamber, a substrate support unit with a heating member, a gas supply unit, a plasma generation unit, and a shower head with a second heating member. The controller manages the heating of the substrate and the shower head to vaporize a precursor applied to the substrate, forming a coating layer on the shower head, which improves film quality and prevents plasma-induced damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the shower head is continuously exposed to plasma for substrate processing, then the plasma generation and substrate treatment function is maintained, but the shower head surface is etched leading to increased processing space volume and altered gas supply hole sizes
Solution Approach 1:
A coating layer is formed on the shower head surface before plasma exposure through vaporization of precursor applied to the substrate. This preliminary coating prevents plasma from directly etching the shower head surface, thereby protecting the original shape and dimensions of the shower head while maintaining its plasma generation function
Solution Approach 2:
The coating layer acts as an intermediary between the plasma and the shower head surface. It absorbs the harmful plasma effects and protects the underlying shower head structure, allowing the shower head to maintain its integrity while still enabling plasma generation for substrate processing
2Productivity
If the shower head surface is etched by plasma, then the processing continues, but the volume of the processing space increases and the size of gas supply holes changes
Solution Approach 1:
By forming a protective coating layer on the shower head before plasma exposure, the etching of the shower head surface is prevented. This maintains the original volume of the processing space and the dimensions of gas supply holes, ensuring consistent processing conditions throughout production
Solution Approach 2:
The precursor material that would otherwise be wasted is converted into a beneficial coating layer on the shower head. This coating layer protects the shower head from plasma etching, transforming a potential waste stream into a protective mechanism that maintains processing space integrity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents damage to the shower head due to plasma exposure, maintains the original thickness of the shower head, reduces the frequency of replacing the shower head, and enhances the film quality of the coating layer.
Implementation Method 1
the controller controls the first heating member to heat the substrate supported by the substrate support unit so that the precursor applied to the substrate is vaporized and a coating layer is formed on the shower head
Implementation Method 2
the controller may control the second heating member of the shower head to apply heat to the coating layer formed on the shower head
Implementation Method 3
a plasma generation unit configured to convert the supplied gas into plasma
Data Source
AI summary
Disclosed are a semiconductor manufacturing facility and a shower head coating method using the same. The semiconductor manufacturing facility includes an index block, a processing block including a substrate processing apparatus, and a substrate transferring block. The substrate processing apparatus includes a chamber including a processing space defined therein, a substrate support unit disposed in the processing space and including a first heating member configured to heat the substrate coated with the precursor, a gas supply unit configured to supply gas to the processing space, a plasma generation unit configured to convert the supplied gas into plasma, a shower head configured to supply the supplied gas to the processing space, and a controller. The controller controls the first heating member to heat the substrate supported by the substrate support unit so that the precursor applied to the substrate is vaporized and a coating layer is formed on the shower head.