Gas Shower Head Pressure Sensing for Uniform Film Formation
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Solution Overview
Problem
Existing film formation processes in semiconductor manufacturing lack accurate and rapid pressure measurement within gas shower heads, affecting the control of gas flow rates and film thickness distribution.
Innovation Solution
Incorporation of pressure sensors within the partitioned areas of the gas shower head to measure pressure directly, allowing for real-time adjustments of gas flow rates based on pressure measurements, thereby improving control over film formation processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If pressure sensors are installed outside the shower head and connected through pipes, then device complexity is reduced and ease of manufacture is improved, but measurement precision and response speed are deteriorated
Solution Approach 1:
The pressure sensor is merged with the shower head body into an integrated structure. The sensor is embedded within the shower head housing, eliminating the need for external connections through pipes. This integration directly addresses the measurement precision problem by placing the sensor at the exact measurement location while avoiding the complexity of external piping arrangements.
Solution Approach 2:
A pressure sensor chamber is introduced as an intermediary space within the shower head structure. This chamber allows the pressure sensor to be positioned inside the shower head while maintaining proper sealing and electrical connections, thus enabling direct pressure measurement without requiring complex external pipe connections.
2Speed
If pressure sensors are installed within the gas diffusion space, then measurement precision and response speed are improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The shower head is segmented into functional zones: a pressure sensor chamber for measurement, a gas diffusion space for gas distribution, and a shower plate with gas supply holes. The pressure sensor is specifically positioned in the sensor chamber that is in communication with the gas diffusion space, allowing rapid pressure measurement without interfering with the gas distribution function. This segmentation enables manufacturing by clearly defining each zone's purpose and integration method.
Solution Approach 2:
The pressure sensor chamber serves multiple functions: it houses the pressure sensor, maintains proper sealing, and allows communication with the gas diffusion space for accurate pressure measurement. This multi-functional design simplifies manufacturing by combining several requirements into a single integrated chamber structure rather than requiring separate components for each function.
3Manufacturing precision
If pressure measurement is not performed accurately in real-time, then device complexity is reduced, but manufacturing precision of film thickness is deteriorated
Solution Approach 1:
A feedback control system is implemented where the pressure sensor continuously monitors pressure in the gas diffusion space and provides real-time signals to a control device. The control device adjusts the gas flow rate based on this feedback to maintain constant pressure during film formation. This closed-loop feedback mechanism ensures high film thickness uniformity while implementing automated pressure control.
Solution Approach 2:
The system performs self-regulation of gas flow rate through automated pressure control. The pressure sensor and control device work together to automatically maintain constant pressure without requiring manual intervention, enabling the system to self-correct pressure variations and ensure consistent film thickness across the wafer surface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control of gas flow rates and film thickness distribution by correcting deviations in pressure, ensuring consistent and accurate film formation on semiconductor wafers.
Implementation Method 1
a pressure sensor portion provided in the gas diffusion space and configured to output a pressure signal corresponding to a pressure measurement value in the gas diffusion space
Implementation Method 2
a gas diffusion space provided at a position facing the mounting table and configured to diffuse the processing gas
Data Source
AI summary
An apparatus for processing a substrate by supplying a processing gas to the substrate in a processing container. The apparatus comprises: a mounting table provided in the processing container and for mounting the substrate; a gas shower head comprising a gas diffusion space provided at a position facing the mounting table and for diffusing the processing gas, and a shower plate having a plurality of gas supply holes for supplying the processing gas diffused in the gas diffusion space to the processing container; a gas supply portion provided to supply the processing gas to the gas diffusion space and having a flow rate adjusting portion for the processing gas; a pressure sensor portion provided in the gas diffusion space and to output a pressure signal corresponding to a pressure measurement value in the gas diffusion space; and a controller to output a control signal for adjusting a flow rate of the processing gas.