Shower Plate Gas Flow Layout for Uniform Epitaxial Deposition
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Solution Overview
Problem
Existing deposition processes in semiconductor manufacturing suffer from instability in laminar flow and non-uniformity due to recirculating flows and stagnant zones, leading to issues with process uniformity and control of dopant concentration in semiconductor structures.
Innovation Solution
The deposition apparatus employs a gas baffle structure and shower plate configuration that redirects process gas flow vertically, orthogonal to rotation-induced gas flow, along with controlled chamber pressure and temperature, to stabilize laminar flow and enhance uniformity, using a controller to manage gas flow and temperature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition processes are used, then film deposition is achieved, but process uniformity deteriorates due to recirculating flows and stagnant zones
Solution Approach 1:
The gas baffle structure segments the reaction chamber into distinct flow regions, directing process gas through defined paths that eliminate recirculating flows and stagnant zones. The baffle divides the chamber to create separate inlet and outlet flow zones, ensuring stable laminar flow across the wafer surface for improved process uniformity.
Solution Approach 2:
The gas baffle structure acts as an intermediary element between the gas inlet and exhaust, mediating the gas flow path to prevent direct recirculation. This intermediate structure guides the process gas through a controlled trajectory that maintains laminar flow stability and prevents formation of stagnant zones.
2Manufacturing precision
If conventional gas flow configuration is used, then deposition is achieved, but dopant concentration control deteriorates due to non-uniform flow distribution
Solution Approach 1:
The gas baffle structure creates locally optimized flow conditions across different regions of the reaction chamber. By segmenting the flow path, each region receives process gas with controlled velocity and direction, ensuring uniform dopant distribution and concentration control across the wafer surface.
Solution Approach 2:
The gas baffle structure modifies flow parameters such as velocity, direction, and pressure distribution to achieve uniform process gas delivery. By changing the flow path geometry, the system maintains consistent dopant concentration across the deposition area, improving manufacturing precision.
3Device complexity
If simple gas passage configuration is used, then device complexity is reduced, but process control deteriorates due to inability to manage flow direction and pressure
Solution Approach 1:
The gas baffle structure serves as an intermediary component that simplifies the overall gas passage configuration while maintaining excellent process control. This single intermediate element effectively manages flow direction and pressure distribution without requiring complex multi-component systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves process uniformity and control over dopant concentration in semiconductor structures by minimizing recirculating flows and stabilizing laminar flow, ensuring consistent deposition of high-dopant semiconductor features.
Implementation Method 1
stabilize laminar flow and enhance uniformity
Implementation Method 2
epitaxially growing an epitaxy feature over the wafer by using the process gas to interact with the wafer
Implementation Method 3
The susceptor may be heated and located within a susceptor environment that is at least partially evacuated
Implementation Method 4
epitaxially growing an epitaxy feature over the wafer
Data Source
AI summary
A method includes introducing a semiconductor-containing precursor gas into a reaction chamber through a gas passage; directing the semiconductor-containing precursor gas from the gas passage to a region over a shower plate, wherein the shower plate is above the gas passage and a wafer in the reaction chamber; guiding the semiconductor-containing precursor gas to flow through the shower plate; rotating the wafer; and epitaxially growing an epitaxy feature over the wafer by using the semiconductor-containing precursor gas to interact with the wafer when rotating the wafer.