Showerhead Assembly Edge Plenum for Uniform Deposition
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Solution Overview
Problem
Current substrate processing apparatuses face challenges in achieving uniform deposition of materials on substrates, particularly at the edge regions, due to limitations in controlling gas composition and plasma modulation across different zones.
Innovation Solution
The apparatus employs a showerhead assembly with an inner and edge plenum system, allowing separate gas sources to supply distinct gases to inner and outer processing zones, enabling precise control of gas flow, plasma characteristics, and reactive gas concentration, thereby modulating plasma at the edge regions for uniform material deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single gas source is used to supply gas uniformly across the substrate, then the device complexity is reduced, but the manufacturing precision of film uniformity deteriorates
Solution Approach 1:
The showerhead assembly is divided into multiple independent plenums (inner plenum and edge plenum) that can supply different gases to different zones of the substrate. This segmentation allows separate control of gas composition and flow rates for the center and edge regions, enabling precise control of film uniformity without requiring a completely complex gas supply system.
Solution Approach 2:
Different gas compositions and flow rates are supplied to different spatial zones of the substrate. The inner plenum supplies process gas to the central region while the edge plenum supplies a different gas composition to the peripheral region. This local quality approach allows optimization of deposition conditions for each zone to achieve uniform film properties across the entire substrate.
2Manufacturing precision
If separate gas sources are used for inner and edge plenums, then the manufacturing precision of film uniformity is improved, but the device complexity increases
Solution Approach 1:
The gas supply system is segmented into separate inlet channels for the inner and edge plenums, allowing independent gas composition control. However, the plenums are integrated within a single showerhead assembly structure, which minimizes the increase in overall device complexity while achieving precise film uniformity control through localized gas delivery.
Solution Approach 2:
Multiple plenums with separate gas sources are merged into a single integrated showerhead assembly. This combining approach allows the system to benefit from separate gas supply control for each zone while maintaining a compact, unified device structure, thus improving film uniformity without proportionally increasing device complexity.
3Productivity
If gas flow is increased to improve deposition rate, then the productivity is improved, but the manufacturing precision of film uniformity deteriorates
Solution Approach 1:
The gas flow rate and composition are optimized locally for each zone. The inner plenum and edge plenum can have different gas flow rates, allowing the center and edge regions to deposit at appropriate rates. This prevents edge effects and non-uniformity that would otherwise occur when increasing overall gas flow to improve productivity.
Solution Approach 2:
By changing the gas flow rate parameter independently for each plenum, the system can maintain optimal deposition conditions across different substrate zones. This allows high productivity through increased overall deposition rate while preserving film uniformity through localized parameter optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures uniform material deposition on substrates by controlling film properties at the edge regions, enhancing deposition process efficiency and consistency.
Implementation Method 1
The showerhead assembly includes an inner plenum in fluid communication with a process gas source and an edge plenum in fluid communication with a tuning gas source
Implementation Method 2
plasma-enhanced chemical vapor deposition (PECVD) processing apparatus operable to deposit thin films
Data Source
AI summary
A deposition apparatus for processing substrates includes a vacuum chamber including a processing zone in which a substrate may be processed. First and second gas sources are in fluid communication with the vacuum chamber. The first gas source is operable to supply a first gas into the vacuum chamber and the second gas source is operable to supply a second gas into the vacuum chamber. A showerhead assembly includes a face plate and back plate. The back plate includes a first gas inlet in fluid communication with the first gas source and a second gas inlet in fluid communication with the second gas source. The face plate includes a lower wall and an outer wall extending vertically upwardly from an outer periphery of the lower wall. The outer wall is sealed to an outer periphery of the back plate such that an inner plenum and an edge plenum are formed between the face plate and the back plate. The face plate includes a first gas permeable region in fluid communication with the first gas inlet via the inner plenum such that the first gas may be supplied therethrough during processing and a second gas permeable region in fluid communication with the second gas inlet via the edge plenum such that a second gas may be supplied therethrough during processing. A substrate pedestal assembly is configured to support a substrate on an upper surface thereof when a substrate is processed in the deposition apparatus.