Showerhead Geometry for Uniform Plasma Distribution on Substrates

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Solution Overview

Problem

Existing plasma processing apparatuses face challenges in accurately controlling the distribution of plasma, leading to non-uniform layer thickness on semiconductor substrates.

Innovation Solution

The apparatus incorporates a showerhead with a diameter longer than the support, featuring specific ratios of radial differences and gaps to enhance plasma distribution, including injection and plasma holes, and connections to optimize plasma flow.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the showerhead structure is changed to control plasma distribution, then plasma distribution control is attempted, but accurate control cannot be achieved

Engineering Contradiction:
Improvelayer thickness uniformityVSAvoidplasma distribution control accuracy
Core Design Contradiction:
Manufacturing precisionVSMeasurement precision

Solution Approach 1:

The patent changes the geometric parameters of the showerhead, specifically making the showerhead diameter larger than the substrate diameter and controlling the radial difference to be no less than half of the gap between showerhead and support. This parameter change enables accurate plasma distribution control and improved layer thickness uniformity

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If the showerhead diameter is increased beyond the support diameter, then plasma distribution is improved, but the device complexity increases

Engineering Contradiction:
Improveplasma distribution uniformityVSAvoidshowerhead configuration complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies local quality by creating a specific radial difference between the showerhead and support that is no less than half of the gap between them. This localized geometric configuration optimizes plasma distribution in the critical region between showerhead and substrate without requiring complex overall system changes

Inventive Principle:
Principle #3Local quality

3Manufacturing precision

If the gap between showerhead and reaction chamber wall is increased beyond showerhead thickness, then plasma flow is optimized, but the device volume increases

Engineering Contradiction:
Improveplasma flow optimizationVSAvoidreaction chamber volume
Core Design Contradiction:
Manufacturing precisionVSVolume of stationary object

Solution Approach 1:

The patent optimizes the gap between the outer circumferential surface of the showerhead and the inner wall of the reaction chamber by setting it greater than the thickness of the showerhead. This parameter optimization improves plasma flow characteristics while maintaining a compact reaction chamber volume

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration results in improved plasma distribution, enhancing layer thickness uniformity and stability, thereby improving the quality of semiconductor substrate processing.

Implementation Method 1

an apparatus for processing a substrate using plasma

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 2

The showerhead may be configured to generate plasma from a reaction gas

Methodology Applied
Scientific EffectPlasma generation: Electric Glow Discharge

Implementation Method 3

a plurality of injection holes configured to inject the reaction gas

Methodology Applied
Scientific EffectGas injection: Jet

Implementation Method 4

a plurality of plasma holes configured to allow a plasma to pass from a first plasma region into a second plasma region

Methodology Applied
Scientific EffectPlasma flow: Plasma

Data Source

PatentUS20250210313A1Apparatus for processing a substrate
Publication Date: 2025.06.26 SAMSUNG ELECTRONICS CO LTD
  • US20250210313A1 patent drawing
  • US20250210313A1 patent drawing
  • US20250210313A1 patent drawing

AI summary

An apparatus for processing a substrate, the apparatus comprising a reaction chamber configured to receive the substrate, a support arranged in the reaction chamber configured to support the substrate, and a showerhead arranged between the reaction chamber and the support configured to inject a reaction gas to the substrate on the support. A diameter of the showerhead is longer than a diameter of the support. A radial difference between the diameter of the showerhead and the diameter of the support is no less than half of a gap between the showerhead and the support.