Integrated Shunt Structure for Stable Current Sensing in Power Semiconductors
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Solution Overview
Problem
Existing power electronic components face challenges in accurately measuring current with minimal spatial requirements and cost-effective solutions, as separate components like shunt resistors and magnetic sensors are expensive and space-consuming, while integrated current sensors often compromise on accuracy and size.
Innovation Solution
A molded electronic component with an integrated current sensor featuring a shunt between a load and sense terminal, where the shunt has a higher specific resistance than the connection, ensuring a resistance variation of less than 10% over the operating temperature range, allowing accurate current measurement with minimal space and cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If separate components (shunt resistors or magnetic sensors) are used for current measurement, then measurement accuracy is improved, but device area and cost increase
Solution Approach 1:
The patent combines the current measurement function with the existing power electronic component structure by integrating a shunt into the connection path between the power semiconductor die and load terminal. This merging eliminates the need for separate external current sensing components, thereby reducing board space while maintaining measurement accuracy through the integrated voltage drop measurement across the shunt.
2Measurement precision
If separate components (shunt resistors or magnetic sensors) are used for current measurement, then measurement accuracy is improved, but cost increases
Solution Approach 1:
The shunt is integrated into the existing component structure as part of the connection architecture between the power semiconductor die and load terminal. This merging eliminates the need for separate external shunt resistors or magnetic sensors, reducing component count and assembly complexity, thereby lowering manufacturing cost while maintaining current measurement accuracy.
3Area of stationary object
If integrated current sensors are used, then device area is reduced, but measurement accuracy and current sensing capability deteriorate
Solution Approach 1:
The shunt acts as an intermediary element in the current path between the power semiconductor die and load terminal. By measuring the voltage drop across this intermediary shunt, the patent achieves accurate current sensing without requiring additional external sensors, thus maintaining measurement accuracy while minimizing device area through integration into the existing structure.
4Measurement precision
If shunt resistance is increased for accurate measurement, then measurement sensitivity is improved, but temperature dependence increases
Solution Approach 1:
The patent specifies that the shunt resistance varies by less than 10 percent over the normal operating temperature range, optimizing the balance between measurement sensitivity and temperature stability. This parameter control ensures that the shunt provides sufficient voltage drop for accurate current measurement while maintaining stable resistance characteristics across temperature variations through material selection and design optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides accurate, space-efficient, and cost-effective current measurement by ensuring a temperature-independent voltage drop across the shunt, enhancing the accuracy of current sensing in power electronic components.
Implementation Method 1
the shunt has a higher specific resistance than the first connection, and wherein a resistance of the shunt varies by less than 10 percent over a normal operating temperature range
Data Source
AI summary
An electronic component includes a plurality of power semiconductor dies, a first terminal, a second terminal separate from the first terminal, and a shunt. The power semiconductor dies are attached to a substrate. The shunt has a first side attached to the first terminal, and a second side opposite the first side. The electronic component includes a first connection between a first contact pad of each of the power semiconductor dies and the second side of the shunt, and a second connection between the second terminal and the second side of the shunt. The shunt has a higher specific resistance than the first connection. A resistance of the shunt varies by less than 10 percent over a normal operating temperature range of the electronic component.