Shutter Disk PVD Chamber Segmentation for In-Situ Oxidation
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Solution Overview
Problem
The existing Physical Vapor Deposition (PVD) process chambers face challenges in achieving repeatable deposition of high uniformity films like Magnesium Oxide (MgO) due to oxygen depletion from targets and shields, leading to poor substrate-to-substrate repeatability and low throughput, as the oxygen required for oxidation is consumed by these components, necessitating multiple chamber transfers for layer formation.
Innovation Solution
The development of internally divisible PVD process chambers using shutter disks to create separate sealed deposition and oxidation cavities within a single chamber, allowing for in-situ gas reactions on substrates without contaminating other deposited surfaces, enabling the deposition and oxidation of metal films in a single process chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a single PVD chamber is used for both deposition and oxidation, then throughput is improved, but substrate-to-substrate repeatability deteriorates due to oxygen depletion by targets and shields
Solution Approach 1:
The single PVD chamber is segmented into multiple sealed cavities using shutter disk assemblies, allowing independent control of deposition and oxidation zones. This enables simultaneous or sequential processing of multiple substrates with controlled oxygen exposure in each cavity, resolving the contradiction between throughput and repeatability.
Solution Approach 2:
Different regions within the chamber are provided with different local environments - the deposition zone maintains vacuum conditions while oxidation zones are filled with oxygen. The shutter disk assemblies create localized sealed cavities around individual substrates, allowing each substrate to experience tailored gas composition and pressure conditions.
2Manufacturing precision
If multiple chamber transfers are used for layer formation, then film uniformity is improved, but throughput deteriorates due to sequential processing requirements
Solution Approach 1:
Multiple processing functions (deposition, oxidation, purging) that previously required separate chamber transfers are merged into a single chamber system with internally divided cavities. The shutter disk assemblies enable sequential access to different gas environments without breaking vacuum or transferring substrates between chambers, maintaining film uniformity while dramatically improving throughput.
Solution Approach 2:
The shutter disk assemblies are pre-positioned to create sealed cavities around substrates before gas introduction. Oxygen is introduced into specific cavities only after substrates are properly positioned and sealed, ensuring controlled oxidation conditions are established before the reaction begins, which maintains film uniformity.
3Reliability
If oxygen is introduced into the entire chamber for oxidation, then oxidation completeness is improved, but cross-contamination of other deposited surfaces increases
Solution Approach 1:
The harmful effect of uncontrolled oxygen exposure is extracted and contained by using shutter disk assemblies to create isolated sealed cavities. Oxygen is introduced only into specific cavities where substrates require oxidation, while other cavities maintaining vacuum or inert atmosphere are protected from oxygen contamination. This ensures complete oxidation in treated areas without cross-contaminating other deposited surfaces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables the formation of repeatable metal oxide layers with improved substrate-to-substrate uniformity and increased throughput by segregating the substrate within a smaller internal cavity for gas reactions, preventing cross-contamination and optimizing oxygen use, thus enhancing the efficiency of the PVD process.
Implementation Method 1
a shutter disk assembly configured to internally divide the process chamber and create a separate sealed deposition cavity and a separate sealed oxidation cavity, wherein the shutter disk assembly includes one or more seals disposed along its outer edges and configured to contact at least one of the conical shield, the conical adaptor, or the deposition rings to form the separate sealed deposition and oxidation cavities
Implementation Method 2
depositing a metal film from a target onto the substrate
Implementation Method 3
oxidizing the metal film deposited on the substrate by introducing oxygen into the oxidation cavity
Data Source
AI summary
Apparatus and methods for forming and using internally divisible physical vapor deposition (PVD) process chambers using shutter disks are provided herein. In some embodiments, an internally divisible process chamber may include an upper chamber portion having a conical shield, a conical adaptor, a cover ring, and a target, a lower chamber portion having a substrate support having inner and outer deposition rings, and wherein the substrate support is vertically movable, and a shutter disk assembly configured to internally divide the process chamber and create a separate sealed deposition cavity and a separate sealed oxidation cavity, wherein the shutter disk assembly includes one or more seals disposed along its outer edges and configured to contact at least one of the conical shield, the conical adaptor, or the deposition rings to form the separate sealed deposition and oxidation cavities.