Si-Controlled Ceramic Chip Component for Heat-Stable Resistance
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Solution Overview
Problem
Small-sized chip-type electronic components using semiconductor ceramics, such as PTC thermistors, exhibit significant changes in electrical characteristics after heat treatment, leading to reduced reliability due to changes in resistance, which is not effectively addressed by existing technologies.
Innovation Solution
A chip-type electronic component with a ceramic body volume of 0.12 mm3 or less, comprising a perovskite compound with Ti and Ba, and containing Si within a specific range (0 mol % ≤ [Si] ≤ 0.62 mol %), which controls the rate of change in resistance and piezoresistive coefficient, thereby minimizing changes in electrical characteristics after heat treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the chip size is reduced to miniaturize the electronic component, then the volume is decreased, but the electrical characteristics become unstable and resistance changes significantly after heat treatment
Solution Approach 1:
The patent applies parameter changes by precisely controlling the Si content within 0-0.62 mol% and the piezoresistive coefficient within -0.04 to 0.04 Ω%/MPa in the perovskite compound. This compositional parameter control stabilizes the electrical characteristics of miniaturized chip-type electronic components after heat treatment, resolving the contradiction between miniaturization and reliability.
Solution Approach 2:
The patent uses composite materials by incorporating Si-doped perovskite compound (Ba1-xLaxTi1-ySiyO3) with specific compositional ratios. The composite structure with controlled Si content and piezoresistive properties maintains electrical stability in small-sized components, addressing the reliability issue while preserving miniaturization benefits.
2Reliability
If the Si content is increased to control the piezoresistive effect, then the stability of electrical characteristics is improved, but the resistance changes more significantly after heat treatment
Solution Approach 1:
The patent optimizes the Si content parameter within a narrow range of 0-0.62 mol% to achieve the desired balance. By precisely adjusting this compositional parameter, the patent simultaneously improves electrical characteristic stability while limiting resistance change after heat treatment to 10% or less, resolving the contradiction between reliability and manufacturing precision control.
3Reliability
If the piezoresistive coefficient is increased to enhance the piezoresistive effect, then the resistance sensitivity to stress is improved, but the electrical characteristics change more after heat treatment
Solution Approach 1:
The patent controls the piezoresistive coefficient within -0.04 to 0.04 Ω%/MPa by adjusting the Si content and perovskite composition. This parameter optimization reduces the harmful resistance changes after heat treatment while maintaining adequate piezoresistive effect, resolving the contradiction between reliability and resistance stability under thermal stress.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the rate of change in resistance to 10% or less, enhancing the reliability of small-sized chip-type electronic components by controlling the Si content and piezoresistive coefficient, ensuring stability during reliability tests.
Implementation Method 1
Some ceramics are known to exhibit a piezoresistive phenomenon in which their resistance changes when a stress is applied. For example, ceramics such as La1-XSrXMnO3 and BaTiO3 have the property (piezoresistive effect) of changing their resistance according to the magnitude of strain and the magnitude of stress
Data Source
AI summary
A chip-type electronic component that includes: a ceramic body 20 having a volume V of 0.12 mm3 or less, wherein the ceramic body comprises: a perovskite compound containing Ti and Ba, and at least Si, and wherein an Si content in the ceramic body 20 satisfies: 0 mol %<[Si]≤0.62 mol %, where [Si] is the Si content (mol %) per 100 mol % of a total content of elements in the ceramic body excluding oxygen.