Si-Substrate-Free Interposer for Signal Integrity and Thermal Management
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Solution Overview
Problem
Conventional integrated circuit packages using silicon-substrate-based interposers face performance degradation due to the semiconductive nature of silicon substrates, leading to signal degradation and heat dissipation challenges as they become increasingly complex with multiple device dies packaged together.
Innovation Solution
The development of silicon-substrate-free (Si-less) packages using a dielectric interposer with through-dielectric vias and hybrid bonding techniques, which eliminates the silicon substrate and enhances heat dissipation through a heat spreader, allowing for more efficient signal communication and packaging density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a silicon substrate-based interposer is used to package multiple device dies, then the package can achieve more functions and higher integration density, but signal degradation and heat dissipation challenges occur due to the semiconductive nature of silicon
Solution Approach 1:
The patent extracts and removes the silicon substrate from the interposer structure, replacing it with a dielectric material. This elimination of the semiconductive silicon substrate resolves the signal degradation issue while preserving the interposer's function of supporting and interconnecting multiple device dies through through-dielectric vias
Solution Approach 2:
The patent changes the fundamental material parameter of the interposer from semiconductive silicon to non-conductive dielectric material. This parameter change fundamentally alters the electrical characteristics, eliminating signal degradation while maintaining the structural and interconnection functions of the interposer
2Productivity
If a silicon substrate-based interposer is used to package multiple device dies, then the package can achieve more functions and higher integration density, but heat dissipation challenges occur
Solution Approach 1:
The patent removes the silicon substrate that causes heat dissipation challenges and replaces it with a dielectric interposer. Additionally, a dedicated heat spreader component is extracted and added to the package structure, separating the signaling function from the thermal management function
Solution Approach 2:
The patent employs composite material structures including the dielectric interposer combined with a heat spreader made of thermally conductive material. This composite approach allows the dielectric to provide electrical isolation while the heat spreader handles thermal dissipation, addressing both signal integrity and heat management requirements
3Ease of operation
If through-silicon vias are formed in the silicon substrate to interconnect features, then interconnection is achieved, but the semiconductive nature causes signal degradation
Solution Approach 1:
The patent removes the silicon substrate entirely and replaces it with a dielectric material, thereby eliminating the source of signal degradation. The through-via interconnection capability is preserved by forming through-dielectric vias in the dielectric interposer, maintaining ease of operation while improving signal integrity
Solution Approach 2:
The dielectric interposer acts as an intermediary material that provides the necessary mechanical support and electrical isolation. The through-dielectric vias serve as intermediaries for electrical connection, replacing the through-silicon vias and eliminating the semiconductive interference while maintaining interconnection functionality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves signal integrity and heat dissipation, enabling more complex and functional integrated circuit packages without the performance degradation associated with silicon substrates, while allowing for higher communication channel density and efficient heat management.
Implementation Method 1
A heat spreader may be attached to the top surfaces of the device dies in order to dissipate the heat generated in the device dies
Data Source
AI summary
A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, etching the plurality of dielectric layers to form an opening, filling the opening to form a through-dielectric via penetrating through the plurality of dielectric layers, forming an insulation layer over the through-dielectric via and the plurality of dielectric layers, forming a plurality of bond pads in the dielectric layer, and bonding a device to the insulation layer and a portion of the plurality of bond pads through hybrid bonding.