Si and Wide Bandgap Chip Parallel Module for Short Circuit Safety
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Solution Overview
Problem
Existing power semiconductor devices face challenges in achieving compactness, security, and simplicity, especially in high voltage applications where series connections of modules are required, and they often lack reliable short circuit failure modes.
Innovation Solution
A power semiconductor module design that includes a Si chip and a wide bandgap material chip connected in parallel, with metal preforms forming conducting paths upon overheating, where the Si chip provides a permanent short circuit failure mode and the wide bandgap material chip offers a temporary conducting path, allowing for intrinsic safety and efficient operation in high voltage applications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal preform is pressed against Si chip to form eutectic alloy for short circuit failure mode, then failure compensation is achieved, but device complexity increases
Solution Approach 1:
The metal preform is designed to automatically form a conducting path through the Si chip when overheating occurs during short circuit conditions. This self-activating mechanism eliminates the need for external control systems or additional components to detect and respond to failures, reducing overall device complexity while maintaining reliable failure compensation.
2Loss of energy
If wide bandgap material chip is used for high voltage operation, then efficiency is improved, but intrinsic safety is reduced
Solution Approach 1:
The Si chip acts as an intermediary safety component in parallel with the wide bandgap material chip. During normal operation, the wide bandgap chip operates efficiently while the Si chip remains in standby. When a failure occurs in the wide bandgap chip, the Si chip with its reliable short circuit failure mode provides intrinsic safety, preventing catastrophic failures in series-connected modules.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables reliable operation in high voltage applications with lower system costs and higher efficiency, reducing the need for mechanical bypasses and explosion-proof housings, while utilizing the advantages of low-loss wide bandgap materials during normal operation.
Implementation Method 1
a metal preform which is adapted for forming, together with the Si substrate, a conducting path through the Si chip, when heated by an overcurrent
Implementation Method 2
when heated by an overcurrent
Implementation Method 3
The second metal preform is adapted for forming an at least temporary conducting path through the wide bandgap material chip, when heated by an overcurrent
Data Source
AI summary
A power semiconductor device includes a base plate; a Si chip including a Si substrate, the Si chip attached to the base plate; a first metal preform pressed with a first press pin against the Si chip; a wide bandgap material chip comprising a wide bandgap substrate and a semiconductor switch provided in the wide bandgap substrate, the wide bandgap material chip attached to the base plate; and a second metal preform pressed with a second press pin against the wide bandgap material chip; the Si chip and the wide bandgap material chip are connected in parallel via the base plate and via the first press pin and the second press pin; the first metal preform is adapted for forming a conducting path through the Si chip, when heated by an overcurrent; and the second metal preform is adapted for forming an temporary conducting path through the wide bandgap material chip or an open circuit, when heated by an overcurrent.