SiBCN Film Formation via Alternating SiBN and Borazine-Ring Layers
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Solution Overview
Problem
The existing methods for forming thin films, such as silicon boronitride (SiBN) and silicon borocarbonitride (SiBCN) films, face limitations in controlling the composition ratio and film properties, particularly in achieving high step coverage and resistance to hydrogen fluoride (HF), due to the complexity of gas supply methods and the dominance of gas-phase reactions.
Innovation Solution
A method involving the alternation of forming a borazine-ring-skeleton-free SiBN film and a borazine-ring-containing SiBCN film, using specific gas precursors like HCDS, BCl3, NH3, and TMB, to control the composition ratio and film properties through surface reactions, enhancing controllability and HF resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If an alternating supply method using multiple process gases is used to form SiBCN film, then high step coverage characteristics are achieved, but the controllability of composition ratio and film property control operations is limited
Solution Approach 1:
The film formation process is segmented into two distinct alternating cycles: a first cycle forming a SiBN film without borazine ring skeleton, and a second cycle forming a SiBCN film with borazine ring skeleton. This segmentation allows independent control of composition parameters for each film type, thereby improving controllability while maintaining high step coverage characteristics through the alternating supply method
Solution Approach 2:
The invention creates a composite film structure by alternating between SiBN film (without borazine ring skeleton) and SiBCN film (with borazine ring skeleton). This composite approach enables precise control over the overall composition ratio and film properties by adjusting the thickness and sequence of each layer, while the alternating gas supply method ensures high step coverage
2Productivity
If transistor sizes decrease, then device integration increases, but film forming temperature must be decreased and resistance to hydrogen fluoride must be improved
Solution Approach 1:
The invention changes the chemical composition parameters of the insulating film by controlling the presence or absence of borazine ring skeleton in alternating layers. This composition parameter change enables the film to achieve required HF resistance and electrical properties at lower formation temperatures, supporting continued device integration as transistor sizes decrease
3Shape
If an alternating supply method is used to form thin film, then high step coverage is achieved, but dielectric constant control is limited
Solution Approach 1:
The invention applies local quality by creating regions with different dielectric properties through alternating SiBN and SiBCN films. Each layer has distinct dielectric characteristics determined by the presence or absence of borazine ring skeleton, allowing precise control of overall dielectric constant by adjusting layer thickness ratios while maintaining high step coverage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the controllability of the composition ratio and dielectric constant of the final SiBCN film, enhances surface roughness, and increases the HF resistance, allowing for more precise control over film properties and characteristics.
Implementation Method 1
a SiBCN film can be formed on a substrate by performing a predetermined number of times a cycle that sequentially supplies those process gases to the substrate
Data Source
AI summary
A method of manufacturing a semiconductor device includes forming a laminated film on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first film which contains a predetermined element, boron, and nitrogen and which does not contain a borazine ring skeleton, and forming a second film which contains the predetermined element and a borazine ring skeleton. The first film and the second film are laminated to form the laminated film.