SiBN Film for Hermetic Memory Encapsulation
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Solution Overview
Problem
Existing methods for forming dielectric encapsulation layers in memory devices, such as those using high-temperature and plasma treatment, can damage transition metal-based memory materials, reducing their storage capability.
Innovation Solution
A method involving thermal deposition of a first material at a temperature below the thermal budget of the memory material, followed by exposure to nitrogen plasma to incorporate nitrogen, repeated to form a hermetic and conformal dielectric encapsulation layer, using precursors like silane and diborane, to create a nitrogen-doped silicon boride layer without high-temperature or plasma damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-temperature plasma treatment processes are used to deposit dielectric encapsulation layers, then the dielectric encapsulation layer can be formed with good quality, but the memory material suffers thermal damage and plasma damage reducing storage capability
Solution Approach 1:
The process is segmented into multiple cycles, each consisting of a deposition step followed by a nitrogen plasma exposure step. This segmentation allows the dielectric layer to be built up gradually while periodically strengthening it against damage, avoiding the need for high-temperature or continuous plasma treatment that would harm the memory material.
Solution Approach 2:
The nitrogen plasma is introduced in preliminary, controlled amounts during the deposition cycles to incorporate nitrogen into the dielectric layer before it fully forms. This preliminary nitrogen incorporation strengthens the dielectric layer's resistance to subsequent plasma damage without exposing the memory material to harmful levels of plasma or heat.
2Reliability
If high-temperature processes are used to form dielectric encapsulation layer, then the dielectric encapsulation layer achieves desired properties, but the memory material exceeds its thermal budget and suffers degradation
Solution Approach 1:
The process parameters are changed to use low-temperature deposition followed by controlled nitrogen plasma exposure. This parameter change allows the dielectric encapsulation layer to achieve desired properties (hermeticity, conformality) without exceeding the memory material's thermal budget, as the nitrogen plasma strengthens the layer without requiring high temperatures.
3Productivity
If conventional deposition methods are used, then the dielectric encapsulation layer can be formed quickly, but it cannot provide adequate protection against moisture and oxygen without damaging the memory material
Solution Approach 1:
The deposition and nitrogen plasma exposure steps are repeated in continuous cycles to build up the dielectric encapsulation layer with progressively improved protective properties. This continuous iterative process ensures the layer achieves adequate hermeticity and protection capability while maintaining productivity through efficient cycling.
Solution Approach 2:
Nitrogen acts as an intermediary element that is incorporated into the dielectric encapsulation layer during the cycling process. This nitrogen incorporation serves as a mediator that enhances the layer's protective properties (hermeticity, resistance to moisture and oxygen) without requiring high-temperature processes that would damage the memory material.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach forms a thin, hermetic, and conformal dielectric encapsulation layer that maintains the integrity of the memory material, preventing thermal and plasma damage, while ensuring effective information storage with low leakage current and high breakdown voltage.
Implementation Method 1
thermally depositing a first material over a memory material by flowing first precursors over the memory material at a temperature less than the temperature of the thermal budget of the memory material
Implementation Method 2
exposing the first material to nitrogen plasma to incorporate nitrogen in the first material
Data Source
AI summary
Embodiments disclosed herein relate to methods for forming memory devices, and more specifically to improved methods for forming a dielectric encapsulation layer over a memory material in a memory device. In one embodiment, the method includes thermally depositing a first material over a memory material at a temperature less than the temperature of the thermal budget of the memory material, exposing the first material to nitrogen plasma to incorporate nitrogen in the first material, and repeating the thermal deposition and nitrogen plasma operations to form a hermetic, conformal dielectric encapsulation layer over the memory material. Thus, a memory device having a hermetic, conformal dielectric encapsulation layer over the memory material is formed.