SiC Device Barrier Metal Temperature Sensor
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Solution Overview
Problem
The manufacturing of silicon carbide semiconductor devices is complicated by the need for separate ion implantation steps for forming semiconductor elements and polysilicon diodes, leading to increased costs and the inability to use polysilicon diodes at high temperatures, as they are not resistant to temperatures above 200°C.
Innovation Solution
A silicon carbide semiconductor device with a temperature detecting element formed using part of the barrier metal in the interconnect layer, eliminating the need for additional ion implantation steps and enabling operation at high temperatures by using a temperature measuring resistive element instead of a polysilicon diode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a polysilicon diode is used as the temperature detecting element in a silicon carbide semiconductor device, then the device can be manufactured using conventional processes, but the number of manufacturing steps increases significantly and the device cannot operate at temperatures above 200°C
Solution Approach 1:
The temperature detecting element is merged with the interconnect layer by forming the resistive element directly from the barrier metal that is already part of the interconnect structure. This integration eliminates the need for separate temperature detecting element fabrication steps, reducing manufacturing complexity while maintaining high-temperature operation capability.
Solution Approach 2:
The material parameter is changed from polysilicon to barrier metal (such as tungsten or tungsten silicide), which enables operation at temperatures above 200°C. This material substitution fundamentally changes the temperature resistance parameter while the formation process utilizes existing barrier metal deposition steps.
2Manufacturing precision
If separate ion implantation steps are performed for forming semiconductor elements and polysilicon diodes, then each component can be optimized, but the manufacturing cost increases due to the increased number of steps
Solution Approach 1:
The formation of the temperature detecting element is merged with the interconnect layer fabrication process. The barrier metal that is deposited for electrical interconnection serves dual purposes: as the interconnect material and as the resistive element for temperature detection. This eliminates separate ion implantation steps for the temperature detecting element while maintaining optimized performance.
Solution Approach 2:
The barrier metal layer is given multiple functions: it serves as the interconnect material for electrical connections and simultaneously forms the resistive element for temperature detection. This multi-functionality reduces the total number of manufacturing steps and associated costs while maintaining the ability to optimize each function through proper material selection and geometric design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the number of manufacturing steps, allows the device to operate effectively at temperatures above 200°C, and minimizes manufacturing costs by integrating the temperature detecting element within the existing interconnect layer, enhancing the device's thermal resistance and operational reliability.
Implementation Method 1
a temperature measuring resistive element formed by using part of the barrier metal in the interconnect layer
Data Source
AI summary
An SiC semiconductor device includes a semiconductor element formed in an SiC substrate, a source electrode and a gate pad formed by using an interconnect layer having barrier metal provided at the bottom surface thereof, and a temperature measuring resistive element formed by using part of the barrier metal in the interconnect line.