SiC Device Bipolar Degradation Reduction via Crystal Defect Barriers
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Solution Overview
Problem
Bipolar degradation in Silicon Carbide (SiC) semiconductor devices occurs due to the recombination of electrons and holes at crystal defects, leading to conversion from 4H or 6H polytype to 3C polytype, resulting in increased electrical resistance and leakage current.
Innovation Solution
Introducing non-doping particles to form zero-dimensional crystal defects in the semiconductor body, which act as barriers to prevent the expansion of basal plane dislocations and stacking faults, and stabilizing these defects through an annealing process to reduce recombination and maintain device stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If non-doping particles are introduced to form crystal defects in the first semiconductor region, then bipolar degradation is reduced and device stability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by introducing non-doping particles to form zero-dimensional crystal defects in the first semiconductor region before the bipolar degradation can occur. This preventive measure creates barrier structures that stop dislocation expansion before it degrades device performance, thereby improving reliability while managing manufacturing complexity through a single additional processing step
Solution Approach 2:
The non-doping particles serve as intermediary elements that mediate between the crystal lattice and potential degradation mechanisms. These particles form zero-dimensional defects that act as barriers, intercepting and preventing the expansion of basal plane dislocations and stacking faults, thus protecting the semiconductor device from bipolar degradation without requiring complex structural modifications
2Power
If the semiconductor device operates at high voltage, then power conversion efficiency is improved, but bipolar degradation occurs due to electron-hole recombination at crystal defects
Solution Approach 1:
The patent converts the harmful effect of electron-hole recombination at crystal defects into a beneficial outcome. By intentionally introducing non-doping particles that form zero-dimensional defects, the patent creates controlled barrier structures that prevent the expansion of more harmful basal plane dislocations and stacking faults. This approach transforms the potential harm of recombination into a protective mechanism that maintains device performance during high-voltage operation
Solution Approach 2:
The patent applies parameter changes by modifying the crystal defect landscape through the introduction of non-doping particles. This changes the distribution and type of defects from harmful extended defects (basal plane dislocations and stacking faults) to beneficial zero-dimensional defects that act as barriers. The parameter change in defect dimensionality (from 2D/1D to 0D) fundamentally alters the degradation mechanism, enabling high-power operation while maintaining reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces bipolar degradation by minimizing the conversion of 4H or 6H SiC to 3C SiC, thereby maintaining device performance and preventing the expansion of defect regions, resulting in improved on-resistance and reduced leakage current.
Implementation Method 1
forming crystal defects in a first semiconductor region by introducing non-doping particles into the semiconductor body
Implementation Method 2
stabilizing these defects through an annealing process to reduce recombination and maintain device stability
Data Source
AI summary
Disclosed is a method for forming a semiconductor device and a semiconductor device. The method includes:in a SiC semiconductor body, forming crystal defects in a first semiconductor region by introducing non-doping particles into the semiconductor body; andforming a second semiconductor region such that there is a pn junction between the first semiconductor region and the second semiconductor region.