Silicon Carbide Block Sublimation for Ingots
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Solution Overview
Problem
Existing methods for manufacturing silicon carbide wafers and ingots face challenges in achieving improved mechanical properties, excellent crystallinity, and reduced defects while maintaining high productivity.
Innovation Solution
A method involving the sublimation of silicon carbide from a silicon carbide block with high thermal conductivity, disposed in a crucible to form a silicon carbide ingot, and subsequently processing the ingot to produce a silicon carbide wafer. The silicon carbide block is designed to enhance heat transfer and uniform temperature distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If seed sublimation method is used to grow silicon carbide ingot, then high growth rate is achieved, but defects and poor crystallinity occur
Solution Approach 1:
The patent changes the physical state parameter of the silicon carbide raw material from powder to block form. This parameter change fundamentally alters the sublimation behavior, enabling uniform temperature distribution and controlled vapor transport while maintaining high growth rates. The block form ensures stable thermal properties and uniform sublimation across the entire raw material surface, resolving the contradiction between productivity and crystallinity.
Solution Approach 2:
The patent utilizes the phase transition of silicon carbide from solid block to vapor phase through controlled sublimation. By heating the silicon carbide block to high temperature, it directly transitions to vapor without melting, and the vapor then deposits on the seed crystal to form the ingot. This phase transition mechanism enables precise control over the growth process, achieving both high growth rates and excellent crystallinity.
2Ease of manufacture
If silicon carbide powder is used as raw material, then sublimation can occur, but uniform temperature distribution cannot be achieved
Solution Approach 1:
The patent changes the physical form parameter of the silicon carbide raw material from powder to block. This parameter change fundamentally improves thermal conductivity and heat distribution characteristics. The block form maintains structural integrity while enabling uniform temperature distribution throughout the entire raw material volume during sublimation, resolving the contradiction between ease of manufacture and temperature uniformity.
3Productivity
If conventional sublimation method is used, then silicon carbide can be grown, but mechanical properties are poor
Solution Approach 1:
The patent changes the raw material form from powder to block, which fundamentally improves the mechanical properties of the grown ingot. The block form ensures uniform sublimation and deposition, resulting in fewer internal defects, better crystallinity, and superior mechanical strength while maintaining high production capability through the efficient sublimation process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method results in silicon carbide wafers and ingots with improved crystallinity, mechanical strength, and reduced defects, while also enhancing productivity through efficient heat transfer and uniform temperature control.
Implementation Method 1
sublimating silicon carbide included in the silicon carbide block to form a silicon carbide ingot
Implementation Method 2
The silicon carbide block may have a thermal conductivity of about 10 W/mK or more in at least one direction
Data Source
AI summary
Disclosed is a method of manufacturing a silicon carbide wafer. The method of manufacturing a silicon carbide wafer includes a step of disposing a silicon carbide block in a crucible; a step of sublimating a silicon carbide included in the silicon carbide block to form a silicon carbide ingot; and a step of processing the silicon carbide ingot.