SiC Semiconductor Body Contact Overlap Defect Management
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Solution Overview
Problem
The growth of high-quality cubic silicon carbide films on silicon substrates is hindered by lattice mismatch and thermal expansion differences, leading to defects that increase leakage current and degrade semiconductor device characteristics.
Innovation Solution
A semiconductor device configuration where the body contact region is positioned to overlap coalesced defects, ensuring that the source and drain regions do not overlap these defects, thereby preventing depletion layers from traversing the assembly section and reducing leakage current, while also allowing for a high-density device structure with increased channel width per unit area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If cubic silicon carbide is grown as a single crystal on silicon substrate, then high-quality epitaxial film with low crystal defects can be obtained, but lattice mismatch and thermal expansion differences cause voids and misfit dislocations that increase leakage current and degrade device characteristics
Solution Approach 1:
The invention converts the harmful coalesced defects into a beneficial configuration by intentionally positioning them underneath the body contact region. The defect structure is not eliminated but rather strategically utilized - the body contact region is designed to overlap with the mask layer position where coalesced defects exist, while the source and drain regions are positioned away from these defects. This transforms the previously harmful defect structure into a non-critical region that does not affect device performance.
2Area of stationary object
If source region or drain region is positioned over coalesced defects, then device area is reduced, but depletion layer traverses the defects causing increased leakage current
Solution Approach 1:
The invention applies local quality by creating different functional zones with different requirements. The body contact region is specifically designed to tolerate the presence of coalesced defects since it is an impurity region for potential fixation. In contrast, the source and drain regions are positioned in defect-free areas to ensure proper device operation. This spatial differentiation of quality requirements allows the device to maintain high reliability while optimizing area utilization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents the degradation of device characteristics by minimizing leakage current and enabling a high-density, high-current semiconductor device with a small device area.
Implementation Method 1
a second silicon carbide film adapted to cover the first silicon carbide film in an opening section of the mask member and the mask member
Data Source
AI summary
A semiconductor device includes a silicon substrate, a silicon carbide film formed on the silicon substrate, a mask member formed on a surface of the silicon carbide film, and having an opening section, single-crystal silicon carbide films each having grown epitaxially from the silicon carbide film exposed in the opening section as a base point, and covering the silicon carbide film and the mask member, and a semiconductor element formed on surfaces of the single-crystal silicon carbide films, an assembly section formed of the single-crystal silicon carbide films assembled to each other exists above the mask member, the semiconductor element has a body contact region, and the body contact region is disposed at a position overlapping the assembly section viewed from a direction perpendicular to the surface of the silicon substrate.