SiC Buffer Layer BPD Detection Using UV Photoluminescence Imaging

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Solution Overview

Problem

Existing inspecting methods struggle to detect basal plane dislocations (BPD) in the buffer layer of silicon carbide substrates without causing adverse effects, which are a major cause of forward current degradation in power devices, affecting long-term reliability.

Innovation Solution

An inspecting method using a combination of reflected light and photoluminescence images with specific wavelength and irradiance conditions, along with a tailored light receiving filter, to detect BPD in the buffer layer, employing a confocal or differential interference optical system.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Difficulty of detecting and measuring

If existing inspecting methods are used to detect BPD in the buffer layer, then detection capability is improved, but forward current degradation and reduced long-term reliability occur due to adverse effects on the buffer layer

Engineering Contradiction:
Improvedetection capability of BPDVSAvoidlong-term reliability
Core Design Contradiction:
Difficulty of detecting and measuringVSReliability

Solution Approach 1:

The patent applies parameter changes by precisely controlling the wavelength (≤386 nm) and cumulative irradiance (≥1.6 W·cm−2·sec) of the excitation light, and by using a light receiving filter with specific wavelength range (≥excitation wavelength and ≤399 nm). These parameter optimizations enable effective BPD detection while preventing adverse effects on the buffer layer, thus resolving the contradiction between detection capability and device reliability

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent replaces conventional detection methods with a specialized optical inspection system that uses photoluminescence imaging. This substitution enables non-contact, non-invasive detection of BPD in the buffer layer without causing mechanical or thermal damage, thereby maintaining long-term reliability while improving detection capability

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Measurement precision

If high-irradiance ultraviolet ray is used to extend SSF to BPD for detection, then detection sensitivity is improved, but the buffer layer suffers damage causing forward current degradation

Engineering Contradiction:
Improvedetection sensitivity of BPDVSAvoiddamage to buffer layer
Core Design Contradiction:
Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The patent optimizes the irradiance parameter to be ≥1.6 W·cm−2·sec (avoiding excessive irradiance that causes damage) and sets the wavelength ≤386 nm. This precise parameter control enables sufficient detection sensitivity while preventing buffer layer damage and forward current degradation

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses a light receiving filter as an intermediary component with specific wavelength transmission characteristics (≥excitation wavelength and ≤399 nm). This filter mediates between the excitation light source and the detector, enabling sensitive BPD detection while blocking harmful wavelengths that could damage the buffer layer

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Effectively detects BPD in the buffer layer, reducing its density and thereby improving the long-term reliability of silicon carbide-based power devices by minimizing forward current degradation.

Implementation Method 1

a second image based on a photoluminescence light caused by irradiation with an excitation light on the buffer layer

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Implementation Method 2

The photoluminescence light is received through a light receiving filter. A wavelength of the received light is equal to or more than the wavelength of the excitation light and equal to or less than 399 nm

Methodology Applied
Scientific EffectOptical filtering: Filter (optical)

Data Source

PatentUS20250305966A1Inspecting method and stack substrate
Publication Date: 2025.10.02 PROTERIAL LTD
  • US20250305966A1 patent drawing
  • US20250305966A1 patent drawing
  • US20250305966A1 patent drawing

AI summary

An inspection method of detecting “BPD” in a buffer layer is established. An inspecting method is an inspecting method of detecting a crystal defect in a buffer layer by using a first image based on a reflected light caused by irradiation with a light on the buffer layer and a second image based on a photoluminescence light caused by irradiation with an excitation light on the buffer layer. The buffer layer is made of silicon carbide into which a conductive impurity is introduced. A wavelength of the excitation light is equal to or less than 386 nm. A cumulative irradiance of the excitation light is equal to or more than 1.6 W·cm−2·sec. The photoluminescence light is received through a light receiving filter. The light receiving filter is a filter transmitting light having a wavelength being equal to or more than the wavelength of the excitation light and equal to or less than 399 nm.