SiC Chip Side Patterns for Easier Semiconductor Identification

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Solution Overview

Problem

Existing SiC semiconductor devices lack efficient structural designs that enhance identification and differentiation, particularly in the context of semiconductor chips, which can lead to confusion and inconvenience in manufacturing and usage.

Innovation Solution

The SiC semiconductor device incorporates a chip with a hexagonal monocrystalline structure, featuring specific side surfaces and ornamental patterns, including p-type impurity regions and a super junction structure with laminated layers of varying conductivity types, enhancing visibility and ease of identification.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional SiC semiconductor devices are used without additional identification features, then the device structure remains simple, but identification and differentiation become difficult leading to confusion in manufacturing and usage

Engineering Contradiction:
Improveease of identificationVSAvoiddevice structure
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The patent applies ornamental patterns with different colors (first color and second color) to the side surface of the SiC semiconductor device. These color-coded patterns enable easy visual identification and differentiation of devices during manufacturing and usage, directly addressing the identification difficulty without requiring functional structural changes.

Inventive Principle:
Principle #32Color changes

Solution Approach 2:

The ornamental pattern is divided into multiple regions (first region and second region) with different colors arranged in specific configurations. This segmentation of the side surface into distinct visual zones enhances identifiability while maintaining overall structural simplicity.

Inventive Principle:
Principle #1Segmentation

2Loss of information

If ornamental patterns are added to enhance identification, then product recognition improves, but manufacturing process complexity increases

Engineering Contradiction:
Improveproduct recognitionVSAvoidmanufacturing process
Core Design Contradiction:
Loss of informationVSDevice complexity

Solution Approach 1:

Different colored ornamental patterns are applied to the side surface to encode device information and enhance recognition. The color-coded system allows multiple pieces of information to be conveyed through visual differentiation, reducing information loss while the patterns are integrated into the existing manufacturing process.

Inventive Principle:
Principle #32Color changes

Solution Approach 2:

The ornamental pattern serves multiple functions: it provides aesthetic appearance, enables device identification, facilitates quality inspection, and aids in sorting during manufacturing. This multi-functionality justifies the addition to the manufacturing process by delivering multiple benefits simultaneously.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed design allows for clear identification and differentiation of semiconductor devices through ornamental patterns, facilitating non-destructive inspection and improving manufacturing efficiency and product recognition.

Implementation Method 1

an impurity region introduced into a silicon carbide layer by a channeling implantation method

Methodology Applied
Scientific EffectIon implantation: Ion Implantation

Implementation Method 2

channeling implantation method

Methodology Applied
Scientific EffectChanneling effect:

Data Source

PatentEP4645392A1Sic semiconductor device
Publication Date: 2025.11.05 ROHM CO LTD
  • EP4645392A1 patent drawingFigure 1
  • EP4645392A1 patent drawingFigure 2A
  • EP4645392A1 patent drawingFigure 2B

AI summary

An SiC semiconductor device includes an SiC layer of a first conductivity type that has a main surface, an active region set in an inner portion of the main surface, an outer peripheral region set in a peripheral edge portion of the main surface, and a column region of a second conductivity type that is formed in the SiC layer at an interval in a horizontal direction along the main surface and includes impurity regions positioned in both the active region and the outer peripheral region.