SiC Coat R-Surface Conceals Interface

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Solution Overview

Problem

In semiconductor manufacturing apparatuses, the SiC coat's two-layer structure can lead to interface formation on the outer surface during grinding, affecting the appearance and potentially causing product defects, which can spread across multiple wafers if not properly managed.

Innovation Solution

The SiC coat is designed with specific surface features, including R-surfaces and interfaces that are strategically positioned to become inconspicuous through careful alignment and curvature of the overcoat and undercoat layers, ensuring that any interfaces formed are hidden from view, thereby maintaining a smooth appearance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the SiC coat is grinded to satisfy different film thickness requirements, then the conductivity and plasma resistance are improved, but an interface between undercoat and overcoat appears on the outer surface causing poor appearance

Engineering Contradiction:
Improveconductivity and plasma resistanceVSAvoidappearance quality
Core Design Contradiction:
ReliabilityVSShape

Solution Approach 1:

The patent applies curvature by forming an R-surface (rounded surface) at the position where the interface between undercoat and overcoat would appear. This curved surface design causes light reflection patterns that make the interface inconspicuous, thereby resolving the contradiction between achieving different film thicknesses for functional performance and maintaining appearance quality.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Adaptability or versatility

If a two-layer structure is used to achieve different film thicknesses, then conductivity and plasma resistance are improved, but the interface becomes visible on the outer surface

Engineering Contradiction:
Improvedifferent film thickness requirementsVSAvoidappearance quality
Core Design Contradiction:
Adaptability or versatilityVSShape

Solution Approach 1:

The patent uses the R-surface curvature to optically mask the interface between the two layers. The rounded surface creates light reflection patterns that conceal the interface, allowing the two-layer structure to maintain its functional advantage of providing different film thicknesses while preserving appearance quality.

Inventive Principle:
Principle #14Spheroidality (Curvature)

3Manufacturing precision

If the interface is made visible for quality control, then manufacturing precision can be verified, but product defects may spread to large number of wafers

Engineering Contradiction:
Improveinterface detectionVSAvoidproduct defect spread
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent applies local quality by making the interface intentionally inconspicuous through the R-surface design. This allows the interface to exist and maintain functional precision (different film thicknesses) while being optically concealed to prevent appearance-related product defects, thus resolving the contradiction between verification needs and defect prevention.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively conceals the interfaces on the outer surface, preventing them from being noticeable and ensuring the SiC coat maintains its intended properties and appearance, even when different film thicknesses are required on each side, thus reducing the risk of product defects.

Implementation Method 1

The bright and dark portions make a line or pattern on the curved surface inconspicuous. Since the first interface appears on the first R-surface, it becomes inconspicuous.

Methodology Applied
Scientific EffectReflection: Reflection

Data Source

PatentUS11453620B2SiC coat
Publication Date: 2022.09.27 ADMAP
  • US11453620B2 patent drawing
  • US11453620B2 patent drawing
  • US11453620B2 patent drawing

AI summary

A SiC coat having an outer surface including a back face, a front face opposite to the back face, a first side face extending in a direction from the back face toward the front face, and a first R-surface between the back face and the first side face, the SiC coat including: an overcoat configured to include a first upper layer side-face portion that forms the first side face and the first R-surface of the outer surface; and an undercoat configured to include a backface portion that forms the back face of the outer surface and a first lower layer side-face portion covered by the first upper layer side-face portion of the overcoat, wherein the first upper layer side-face portion and the backface portion form a first interface, and the first interface appears on the first R-surface of the outer surface.