SiC-Coated Getter Support for Quartz Devitrification in CVD Reactors
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Solution Overview
Problem
Existing semiconductor processing systems face quality control issues due to devitrification of quartz components, particularly near the susceptor, which affects the purity of processed wafers and reduces chamber throughput.
Innovation Solution
The implementation of a chemical vapor deposition system with a susceptor support ring and a getter support coated with silicon carbide (SiC), positioned to maximize distance from the susceptor support ring, and a getter support shelf to thermally isolate the getter support, reducing devitrification and maintaining reactor function.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If quartz components are used in the deposition chamber, then the chamber is transparent to radiation energy and can withstand high temperatures, but devitrification occurs near the susceptor which affects wafer purity and reduces throughput
Solution Approach 1:
A coating layer is introduced as an intermediary between the quartz susceptor and the processing environment. This coating acts as a protective barrier that prevents direct interaction between the quartz and devitrifying agents, thereby maintaining wafer purity while allowing the quartz to retain its temperature resistance properties
Solution Approach 2:
The susceptor is constructed as a composite structure combining quartz with additional protective layers or materials. This composite approach allows the quartz to provide thermal stability while the additional materials prevent devitrification, resolving the contradiction between temperature resistance and wafer purity
2Reliability
If the getter support is positioned close to the susceptor support ring, then the reactor function is maintained, but devitrification increases due to thermal exposure
Solution Approach 1:
A thermally insulating layer or material is introduced as an intermediary between the getter support and the susceptor support ring. This intermediary reduces thermal exposure to the getter support while maintaining the necessary reactor function, thereby minimizing devitrification
Solution Approach 2:
The getter support is designed with non-uniform thermal properties or selective coating in specific regions. The local quality variation allows different parts of the getter support to have different thermal resistances, maintaining reactor function in critical areas while preventing devitrification in thermally sensitive regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces devitrification of quartz components, maintains the inert properties of quartz, and enhances the throughput of semiconductor processing systems by minimizing impurities and maintaining chamber integrity.
Implementation Method 1
a getter support coated with silicon carbide (SiC), positioned to maximize distance from the susceptor support ring, and a getter support shelf to thermally isolate the getter support
Data Source
AI summary
Systems of reducing devitrification within a chemical vapor deposition system can include a susceptor support ring that is configured to be positioned between a gas inlet and a gas outlet of a chamber passage. An example system can also include a getter support comprising a support base and one or more recesses therein. Each of the one or more recesses can be arranged to receive corresponding one or more support elements that are configured to support the getter plate. At least a portion of the getter support may include a coating comprising silicon carbide (SiC) having a thickness of at least about 50 microns. The getter support may be arranged to be disposed a maximum distance of between about 1 mm and about 10 mm from the susceptor support ring.