Pretreated SiC Composite Substrate With Controlled Dopant Depth
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The production of high-performance semiconductor components, especially those with blocking voltages over 600 V, is complex and costly due to the need for epitaxial layer deposition and monocrystalline carrier wafers, which are expensive and difficult to process.
Innovation Solution
A method involving a pretreated composite substrate is developed, where a donor substrate with a doped layer is bonded to an acceptor substrate using ion implantation and energy filtering to create a predetermined dopant depth profile, allowing for the reduction of complexity and cost in producing high-quality semiconductor components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If epitaxial layer deposition and monocrystalline carrier wafers are used to produce high-performance semiconductor components, then component quality and performance are improved, but production complexity and cost increase significantly
Solution Approach 1:
The invention divides the substrate into a donor substrate and an acceptor substrate that are bonded together. The donor substrate contains the doped drift zone layer, while the acceptor substrate provides the carrier function. This segmentation allows each substrate to be optimized independently and simplifies the overall production process by eliminating the need for complex epitaxial deposition on monocrystalline carrier wafers.
Solution Approach 2:
The drift zone layer is doped in advance during the growth of the donor substrate using ion implantation with energy filtering, before bonding to the acceptor substrate. This preliminary doping action eliminates the need for subsequent complex epitaxial deposition steps and allows precise control of the dopant depth profile, thereby reducing production complexity while maintaining high component quality.
2Manufacturing precision
If epitaxial layer deposition is used to form the drift zone, then precise dopant depth profiles can be achieved, but production cost and process complexity increase
Solution Approach 1:
The invention replaces the mechanical/chemical epitaxial deposition process with ion implantation followed by energy filtering. The energy filter selectively transmits ions at specific energies, precisely controlling the dopant depth profile through a well-defined physical mechanism. This substitution achieves manufacturing precision comparable to or better than epitaxial deposition while significantly reducing production cost and simplifying the manufacturing process.
Solution Approach 2:
The invention changes the fundamental parameter of dopant introduction from chemical deposition to physical ion implantation with energy selection. By controlling the energy of implanted ions through the energy filter, the dopant depth profile is precisely determined by the ion energy distribution rather than by deposition conditions, enabling accurate control at lower cost and with simpler equipment.
3Reliability
If monocrystalline carrier wafers are used, then the contribution to on-resistance can be minimized, but the production process becomes enormously costly
Solution Approach 1:
The invention uses a donor substrate that serves as a temporary carrier during the bonding process. After the doped drift zone layer is formed and bonded to the acceptor substrate, the undoped portion of the donor substrate can be removed. This disposable donor substrate approach eliminates the need for expensive monocrystalline carrier wafers while still achieving optimized on-resistance through precise doping control in the drift zone layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the production of high-performance semiconductor components with reduced complexity and lower costs by using a pretreated composite substrate with a doped layer, optimizing the dopant depth profile for improved performance and efficiency.
Implementation Method 1
doping a first layer in the donor substrate by ion implantation using an energy filter
Implementation Method 2
the energy filter is a microstructured membrane having a predefined structure profile for adapting a dopant depth profile and/or defect depth profile caused by the implantation
Implementation Method 3
producing a bond between donor substrate and acceptor substrate
Data Source
AI summary
A method for producing a pretreated composite substrate, which is used as the basis for further processing into electronic semiconductor components, includes doping a first layer of SiC in a donor substrate by ion implantation using an energy filter; generating a predetermined breaking point in the donor substrate; and producing a bonded connection between donor substrate and acceptor substrate, the first layer being arranged in a region between the acceptor substrate and a remaining part of the donor substrate. Lastly, the donor substrate is split in the region of the predetermined breaking point to generate the pretreated composite substrate. The pretreated composite substrate has the acceptor substrate and a doped layer, which is connected to the acceptor substrate and includes at least a portion of the first layer of the donor substrate.