SiC Trench MOSFET Contact Layout for Uniform Temperature Distribution
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Solution Overview
Problem
Conventional silicon carbide semiconductor devices with discontinuously arranged contact regions suffer from low uniformity in temperature distribution during operation, and are prone to characteristic fluctuations due to pattern shift issues during manufacturing.
Innovation Solution
A silicon carbide semiconductor device design featuring a silicon carbide substrate with a drift region, body region, source region, and contact region, where the contact region is strategically positioned to maintain constant area and continuity, ensuring uniform heat generation and temperature distribution, even if a pattern shift occurs during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If contact regions are discontinuously arranged inside contact holes, then device structure is formed, but uniformity of temperature distribution deteriorates due to uneven current flow
Solution Approach 1:
The contact region is divided into multiple discrete contact regions arranged in a specific pattern (e.g., alternating or distributed arrangement) rather than a continuous structure. This segmentation allows current to flow through multiple paths, distributing heat generation more uniformly across the device structure, thereby improving temperature distribution uniformity while maintaining the discontinuous arrangement for manufacturing purposes.
2Ease of manufacture
If pattern position shifts occur during manufacturing, then manufacturing variability increases, but contact region area becomes insufficient leading to characteristic fluctuations
Solution Approach 1:
Different regions of the contact structure are designed with different properties - specifically, the contact regions are strategically positioned and sized to compensate for potential pattern shifts. By optimizing the local arrangement and dimensions of individual contact regions, the design ensures that even if manufacturing variations occur, the overall contact area and electrical characteristics remain within acceptable ranges, maintaining device reliability.
Data Source
AI summary
A silicon carbide semiconductor device includes a silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface. The silicon carbide substrate includes a drift region being a first-conductivity type, a body region being a second-conductivity type and provided on the drift region, a source region being the first-conductivity type and provided on the body region such that the source region is separated from the drift region, a contact region being the second-conductivity type and provided on the body region. Gate trenches are provided in the first main surface, and extend in a first direction parallel to the first main surface. The contact region is in contact with a first gate trench from both sides in a second direction orthogonal to the first direction and spaced apart from a second gate trench adjacent to the first gate trench in the second direction.