SiC Doped Contact Region Using Plasma Doping and Ion Implantation
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Solution Overview
Problem
Challenges exist in forming doped regions of SiC semiconductor devices with reduced area-specific on-state resistance and efficient ohmic contact formation, particularly in small mesa regions, due to limitations in current doping methods.
Innovation Solution
A method involving plasma doping and ion implantation processes is used to introduce dopants into SiC semiconductor bodies, where plasma doping provides a deeper penetration and homogeneous doping at the surface, while ion implantation achieves deeper penetration, optimizing the doped region for different functional purposes, including ohmic contact formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If ion implantation process is used to introduce dopants into SiC semiconductor body, then deep penetration of dopants is achieved, but homogeneous doping at the contact surface is difficult to obtain
Solution Approach 1:
The doping process is segmented into two distinct steps: first, ion implantation is used to achieve deep penetration of dopants into the SiC semiconductor body; second, plasma doping is applied to provide homogeneous doping at the contact surface. This segmentation allows each process to optimize for its specific function, resolving the contradiction between deep penetration and surface homogeneity.
Solution Approach 2:
The invention changes the doping parameters by switching from ion implantation (high energy, deep penetration) to plasma doping (lower energy, surface-level homogeneous doping). This parameter change enables the system to achieve both deep dopant penetration and uniform surface distribution by utilizing the complementary characteristics of two different doping mechanisms.
2Area of stationary object
If device geometries are shrunk to reduce area-specific on-state resistance, then cost is reduced, but ohmic contact formation on doped regions becomes challenging
Solution Approach 1:
The invention applies local quality by creating a highly doped contact surface region through plasma doping that is distinct from the deeper doped regions formed by ion implantation. This localized enhancement of dopant concentration at the contact surface improves ohmic contact formation in the specific area where contacts are formed, while maintaining the shrunk device geometry for cost reduction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the homogeneity and efficiency of dopant distribution, reducing contact resistance and enabling high-dose, uniform doping concentrations, thereby improving the performance of SiC semiconductor devices.
Implementation Method 1
introducing dopants of the first conductivity type into the SiC semiconductor body by at least one plasma doping process
Implementation Method 2
introducing dopants of the first conductivity type into the SiC semiconductor body by at least one ion implantation process
Data Source
AI summary
A method of forming a semiconductor device is proposed. The method includes forming a doped region of a first conductivity type in a SiC semiconductor body. Forming the doped region includes introducing dopants of the first conductivity type into the SiC semiconductor body by at least one ion implantation process. Forming the doped region further includes introducing dopants of the first conductivity type into the SiC semiconductor body by at least one plasma doping process. A penetration depth of the dopants introduced by the at least one ion implantation process is larger than a penetration depth of the dopants introduced by the at least one plasma doping process. The method further includes forming a contact material on a contact surface portion of the doped region. The contact surface portion includes the dopants introduced by at least plasma doping process.