Silicon Carbide Crystal Growth via Molten Composition
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Solution Overview
Problem
Current methods for growing silicon carbide single crystals, such as the chemical vapor deposition method, are limited by high temperatures and defects like micropipes, while sublimation methods are costly and inefficient, necessitating a solution for low-temperature crystal growth with improved quality and reduced production costs.
Innovation Solution
A silicon-based molten composition represented by Formula 1 (Si(a)M1(b)M2(c)M3(d), where a is 0.3 to 0.8, b is 0.1 to 0.5, c is 0.01 to 0.3, and d is 0.01 to 0.2, using metals like nickel, titanium, and aluminum, which allows for the precipitation of silicon carbide single crystals at low process temperatures through a solution growth method.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the sublimation method is used to grow silicon carbide single crystal at high temperature (2000°C or more), then the crystal can be grown, but defects such as micropipe and stacking defects are likely to occur
Solution Approach 1:
The patent changes the temperature parameter from high temperature (2000°C or more in sublimation method) to low temperature (below 2000°C) growth, and changes the phase state from vapor phase (sublimation) to liquid phase (molten composition), thereby reducing defects while maintaining crystal quality
Solution Approach 2:
The patent utilizes phase transition by employing a molten composition (liquid phase) instead of vapor phase sublimation, allowing crystal growth at lower temperatures and reducing the formation of micropipe and stacking defects
2Ease of manufacture
If the chemical vapor deposition method is used, then the process can be simplified, but only growth into a thin film level having a limited thickness is possible
Solution Approach 1:
The patent changes the growth medium from gas phase (chemical vapor deposition) to liquid phase (molten composition), enabling bulk crystal growth beyond thin film thickness while maintaining process simplicity
Solution Approach 2:
The patent employs a liquid-based growth system (molten composition) instead of gas-based chemical vapor deposition, allowing for greater crystal thickness through controlled solidification and growth in the liquid phase
3Manufacturing precision
If the sublimation method is used at high temperature, then silicon carbide single crystal can be grown, but production costs increase
Solution Approach 1:
The patent reduces the temperature parameter from 2000°C or more to below 2000°C, which lowers energy consumption and production costs while maintaining crystal quality through the use of molten composition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables stable and high-quality silicon carbide single crystal growth at reduced temperatures, lowering production costs and time, and improving crystal quality by enhancing carbon solubility and surface energy, thus overcoming the limitations of existing methods.
Implementation Method 1
dissolving carbon (C) in the silicon-based molten composition to form a molten solution
Implementation Method 2
supercooling the molten solution to grow a silicon carbide single crystal on the seed crystal
Implementation Method 3
capable of precipitating a silicon carbide single crystal at low process temperature
Data Source
AI summary
A silicon-based molten composition according to an exemplary embodiment is used for a solution growth method for forming a silicon carbide single crystal, and represented by Formula 1 including silicon (Si), a first metal M1, a second metal M2 and a third metal M3, wherein the first metal M1 is one or more selected from the group consisting of nickel (Ni) and manganese (Mn), the second metal M2 is one or more selected from the group consisting of scandium (Sc) and titanium (Ti), and the third metal M3 is one or more selected from the group consisting of aluminum (Al) and gallium (Ga):SiaM1bM2cM3d Formula 1wherein a is 0.3 to 0.8, b is 0.1 to 0.5, c is 0.01 to 0.3, d is 0.01 to 0.2, and a+b+c+d is 1.