Movable Heat-Insulating Material for SiC Crystal Growth
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Solution Overview
Problem
Existing methods for growing SiC single crystals lack sufficient control over temperature conditions and shape, leading to suboptimal quality and size of the crystals.
Innovation Solution
A SiC single crystal growth apparatus with a movable heat-insulating material positioned relative to the growing crystal, allowing precise control of the temperature distribution and shape through a guide member and support structure, enabling the growth of larger and higher-quality SiC single crystals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a heat-insulating material is placed at a predetermined position, then the temperature distribution can be controlled, but the shape of the SiC single crystal cannot be freely controlled
Solution Approach 1:
The heat-insulating material is made movable along the extension direction of the guide member, allowing dynamic adjustment of its position relative to the growing crystal. This enables real-time control of temperature distribution and crystal shape during the growth process, resolving the contradiction between temperature control and shape control by making the system adaptable rather than fixed
Solution Approach 2:
The heat-insulating material is divided into multiple sections that can be independently positioned along the guide member. This segmentation allows different regions of the crystal to receive differentiated thermal control, enabling precise shaping of the crystal while maintaining overall temperature management
2Area of stationary object
If the diameter of SiC single crystal substrate is increased to meet market demands, then larger epitaxial wafers can be produced, but the quality and uniformity of the crystal may deteriorate
Solution Approach 1:
The movable heat-insulating material allows for localized thermal control across different regions of a large-diameter crystal. By adjusting the position and configuration of heat-insulating sections, uniform temperature distribution can be maintained across the entire crystal surface, ensuring consistent quality throughout the large substrate area
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively controls the shape and temperature distribution of the SiC single crystal, enhancing its quality and size, reducing defects and stress, and allowing for the growth of larger diameter and longer length crystals.
Implementation Method 1
a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member
Implementation Method 2
the sublimation gas sublimated from raw material powder in the crucible is supplied to the seed crystal by heating the crucible
Data Source
AI summary
A SiC single crystal growth apparatus of an embodiment includes a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material; a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member; and a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member.