SiC Material Crystal Orientation Control for Uniform Plasma Etching
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Solution Overview
Problem
SiC materials used in semiconductor processes experience unstable and uneven etching in plasma environments due to varying crystal orientations, leading to increased manufacturing costs and reduced product stability.
Innovation Solution
The development of SiC materials and composite materials with a diffraction intensity ratio of X-ray diffraction peaks less than 1.5, favoring the (111) plane as the preferred growth crystal orientation, achieved by controlling the source gas supply rate and growth rate, resulting in stable and uniform etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If SiC is used in semiconductor field, then heat resistance and chemical resistance are improved, but etching amount varies by crystal orientation leading to reduced product stability
Solution Approach 1:
The patent changes the crystal growth parameters by controlling the source gas supply rate and growth rate to achieve a specific diffraction intensity ratio (I≤1.5), which indicates a preferred (111) plane orientation. This parameter change resolves the contradiction by making the etching behavior uniform across different crystal orientations while maintaining the inherent heat and chemical resistance of SiC.
Solution Approach 2:
The patent employs a composite structure with multiple crystal orientations, specifically designing a material where the (111) plane is the preferred growth orientation. This composite approach combines different crystallographic planes in a controlled manner, resulting in uniform etching characteristics while preserving the excellent thermal and chemical properties of SiC.
2Reliability
If SiC material is frequently replaced to maintain stability, then product stability is improved, but manufacturing cost increases
Solution Approach 1:
By changing the crystal growth parameters to achieve a diffraction intensity ratio of 1.5 or less, the patent creates an SiC material with uniform etching characteristics. This eliminates the need for frequent replacements, thereby improving productivity and reducing manufacturing costs while maintaining product stability.
3Productivity
If carbon material is used for susceptor, focus ring, or electrode, then manufacturing cost is reduced, but foreign matters are generated
Solution Approach 1:
The patent creates a composite material structure where SiC coating layers with specific crystal orientations are applied on a carbon material base. This composite approach eliminates foreign matter generation from pure carbon materials while maintaining cost-effectiveness, as the SiC coating provides the necessary performance without requiring complete replacement of the carbon substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures a stable and uniform etching process, reducing the occurrence of cracks and holes, increasing the material's lifetime, and enhancing economic efficiency and productivity by maintaining a low etching amount and preferred crystal orientation.
Implementation Method 1
a diffraction intensity ratio I of an X-ray diffraction peak calculated by the following Formula 1 may be less than 1.5
Data Source
AI summary
The present invention relates to an SiC material and an SiC composite material and, more particularly, to an SiC material and an SiC composite material having a diffraction intensity ratio (I) of an X-ray diffraction peak, calculated by formula 1 down below, of less than 1.5. The present invention can provide an SiC material and an SiC composite material which can be etched evenly when exposed to plasma and thereby reduce the occurrence of cracks, holes and so forth. [Formula 1] Diffraction intensity ratio (I)=(peak intensity of plane (200)+peak intensity of plane (220))/peak intensity of plane (111).