4H-SiC Current Sense Layout Against Band-Shaped Defects
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Solution Overview
Problem
In semiconductor devices using SiC substrates, band-shaped defects can grow in the active or current sense regions, leading to increased on-resistance and fluctuations in current monitoring, which compromises the accuracy of current monitoring.
Innovation Solution
The semiconductor device incorporates a 4H-SiC substrate with an off-angle in a specific direction, positioning the current sense region outside the active region's view along that direction, thereby suppressing the growth of band-shaped defects into the current sense region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the current sense region is positioned within or overlapping the active region, then the device area is reduced, but band-shaped defects can grow into the current sense region causing on-resistance increase and current monitoring fluctuations
Solution Approach 1:
The patent positions the current sense region in a different spatial arrangement relative to the active region, specifically in a range where the active region is not present when viewed along a specific direction. This spatial separation in a particular dimension prevents defect propagation from affecting the current sense region while maintaining overall device compactness.
Solution Approach 2:
The patent applies different spatial configurations to different regions of the device. The active region and current sense region are arranged with specific spatial relationships, where the current sense region is positioned in an area not occupied by the active region when viewed along a specific direction, providing localized protection against defect propagation.
2Manufacturing precision
If band-shaped defects grow in the active region, then the on-resistance increases, but this can propagate to the current sense region causing sense ratio fluctuations
Solution Approach 1:
The patent extracts or separates the current sense region from the defect-prone active region by positioning it in a range where the active region is not present when viewed along a specific direction. This separation removes the vulnerability of the current sense region to defect propagation while maintaining the functional integrity of both regions.
Data Source
AI summary
A semiconductor device includes a semiconductor substrate having an active region in which a main switching element structure is formed, a current sense region in which a sense switching element structure is formed, and a peripheral region located around the active region and the current sense region. The semiconductor substrate is a 4H-SiC substrate having an off angle in a <11-20> direction. The current sense region is disposed in a range where the active region is not present when viewed along the <1-100> direction.