SiC CVD Furnace Segmentation for Deposit Management
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Solution Overview
Problem
The existing SiC epitaxial wafer manufacturing process faces challenges with high costs and reduced production throughput due to the formation of deposits on the inner walls of the furnace body during chemical vapor deposition, which can lead to defects when these deposits adhere to the substrate.
Innovation Solution
A separable furnace body structure is introduced, where only the lower part prone to deposits can be replaced, reducing maintenance frequency and costs, while the upper and lower parts are connected through a fitting mechanism to control gas flow and prevent heat conduction, thereby suppressing deposit formation and maintaining a high-quality epitaxial film growth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the furnace body is cleaned every time a deposit is formed, then the quality of the epitaxial film is maintained, but the production throughput is reduced
Solution Approach 1:
The furnace body is divided into an upper part and a lower part that can be separated. The lower part, which is prone to deposit formation, can be independently replaced without replacing the entire furnace body or stopping production for extensive cleaning operations.
2Manufacturing precision
If the entire furnace body is replaced when deposits form, then the epitaxial film quality is maintained, but the manufacturing cost increases
Solution Approach 1:
The furnace body is segmented into replaceable lower part and permanent upper part. Only the contaminated lower part needs replacement, significantly reducing material costs compared to replacing the entire furnace body.
Solution Approach 2:
The lower part of the furnace body is designed as a consumable component that is discarded when contaminated by deposits, while the expensive upper part is recovered and reused for multiple production cycles.
3Ease of manufacture
If the furnace body structure is made separable, then the maintenance cost is reduced, but the device complexity increases
Solution Approach 1:
The furnace body is divided into upper and lower parts connected by a simple hook mechanism, adding minimal structural complexity while enabling easy maintenance and replacement of the lower part.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the manufacturing cost of SiC epitaxial wafers by minimizing the need for frequent furnace body replacements, improving throughput, and ensuring high-quality epitaxial film growth by controlling gas flow and temperature differences within the furnace.
Implementation Method 1
the vicinity of the SiC wafer is heated by radiant heat by the heating device, thereby forming a thin SiC epitaxial film on the surface of the SiC wafer
Implementation Method 2
the first portion includes a protruding part that protrudes in an outer peripheral direction, the second portion includes a hook part on which the protruding part is hung, and the first portion and the second portion are connected to each other by hanging the hook part on the protruding part
Data Source
AI summary
A SiC chemical vapor deposition apparatus is provided, including: a furnace body inside of which a growth space is formed; and a mounting table which is positioned on a lower portion of the growth space and has a mounting surface on which a SiC wafer is mounted, in which the furnace body is separated into a plurality of members in a vertical direction substantially orthogonal to the mounting table, the plurality of members includes a first portion and a second portion, the first portion includes a protruding part that protrudes in an outer peripheral direction, the second portion includes a hook part on which the protruding part is hung, and the first portion and the second portion are connected to each other by hanging the hook part on the protruding part.