SiC Semiconductor Dicing via Damaged Region
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Solution Overview
Problem
Silicon carbide semiconductor devices face challenges during dicing due to the hardness of the material, leading to distortion, cracks, and short dicing blade life, making it difficult to suppress deformation and maintain electrical characteristics over time.
Innovation Solution
A silicon carbide semiconductor device is manufactured with a damaged region having impaired crystallinity and higher impurity concentration, formed through ion implantation or laser irradiation, which facilitates cutting and reduces distortion by lowering the hardness of the material at the cut surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If silicon carbide semiconductor devices are diced using conventional methods, then the material's hardness provides structural strength, but it causes distortion, cracks, and short dicing blade life
Solution Approach 1:
A damaged region is formed in advance at the periphery of the semiconductor element through ion implantation or laser irradiation, creating a sacrificial zone with impaired crystallinity. This preliminary damage allows the cutting blade to easily penetrate and separate elements without transmitting stress to the active regions, preventing distortion and cracks while maintaining the overall structural strength of the device.
Solution Approach 2:
The solution converts the harmful effect of material hardness into a benefit by creating a controlled damaged region that absorbs cutting stress. The impaired crystallinity in the periphery acts as a stress buffer, allowing easy cutting while the intact active regions maintain their structural strength and reliability. The hardness of the main body is preserved while the periphery is intentionally weakened for cutting purposes.
2Productivity
If the semiconductor material is cut from the wafer, then individual chips are obtained, but deformation occurs and blade life is reduced
Solution Approach 1:
The damaged region is localized to the peripheral area surrounding each semiconductor element, while the active regions maintain their original crystalline structure. This local quality change allows the cutting blade to easily traverse the periphery without encountering hard material, significantly extending blade life, while the active regions remain intact for high-quality chip production.
3Reliability
If the semiconductor layer is divided for each element region beyond the step part, then chipping and cracks are suppressed, but the manufacturing process becomes more complex
Solution Approach 1:
Instead of dividing the semiconductor layer after forming the element structure, the damaged region is created in advance at the periphery. This preliminary action defines the cutting path before any separation occurs, eliminating the need for post-formation layer division and simplifying the manufacturing process while still preventing chipping and cracks during dicing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The damaged region allows for easier cutting and reduces deformation during dicing, enhancing the reliability and longevity of the semiconductor device by preventing distortion from propagating to the active and termination regions.
Implementation Method 1
formed through ion implantation or laser irradiation
Implementation Method 2
formed through ion implantation or laser irradiation
Data Source
AI summary
A silicon carbide semiconductor device includes a semiconductor substrate of a first conductivity type; an active region in which a main current flows provided on the semiconductor substrate; a termination region disposed outside of the active region and in which a voltage withstanding structure is formed; and a damaged region disposed outside the termination region and in which crystallinity is impaired, the damaged region being exposed at a cut surface that is formed when singulation is performed.