SiC Die Interruption Layer for Stacking Fault Suppression
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Solution Overview
Problem
Silicon carbide (SiC) semiconductor devices face challenges with electron-hole recombination and stacking fault growth at the interface between the substrate and epitaxial layer system, affecting electrical properties, particularly in high-voltage and high-current applications.
Innovation Solution
Incorporating an interruption layer, which can be amorphous, porous, or highly doped, embedded at a vertical distance from the interface between the SiC substrate and the epitaxial SiC layer system, to physically interrupt the crystal structure and reduce electron-hole recombination and stacking fault growth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an interruption layer is embedded into the SiC substrate or epitaxial layer system, then stacking fault growth is stopped and electron-hole recombination is reduced, but device complexity increases
Solution Approach 1:
An interruption layer is introduced as an intermediary element between the SiC substrate and the epitaxial layer system. This layer physically interrupts the crystal structure to stop stacking fault growth and reduces electron-hole recombination at the interface, thereby improving electrical properties without requiring fundamental changes to the device architecture
Solution Approach 2:
The interruption layer is strategically positioned at specific locations where stacking faults originate and where electron-hole recombination occurs most strongly (at the interface between substrate and epitaxial layer system). This localized intervention addresses the problem at its source without modifying the entire device structure
2Reliability
If the interruption layer is embedded at a vertical distance from the interface, then stacking fault growth is effectively stopped, but manufacturing precision requirements increase
Solution Approach 1:
The interruption layer is embedded into the SiC substrate before the epitaxial layer system is grown. This preliminary action allows the layer to be positioned at a controlled vertical distance from the future interface, enabling stacking fault suppression while maintaining manageable manufacturing precision requirements through process sequencing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The interruption layer effectively shields the interface from recombination and stops the growth of stacking faults, enhancing the electrical properties and reliability of SiC semiconductor devices, particularly in high-voltage and high-current applications.
Implementation Method 1
The interruption layer is embedded either into the SiC substrate or into the epitaxial SiC layer system... it can form or serve as an 'interruption' of the crystal structure
Implementation Method 2
It can... 'interrupt' (e. g. strongly decrease) an electron-hole (eh) recombination, e. g. shield the interface between the substrate and the epitaxial layer system from the eh recombination
Data Source
AI summary
The disclosure relates to a semiconductor die with a semiconductor device in a semiconductor body, the semiconductor body comprising a silicon carbide substrate; an epitaxial silicon carbide layer system on a first side of the silicon carbide substrate; an interruption layer; wherein the interruption layer is embedded either into the silicon carbide substrate or into the epitaxial silicon carbide layer system, in each case at a vertical distance from the first side of the silicon carbide substrate.