SiC Drive Wire Layout for Low-Inductance Semiconductor Packaging
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Solution Overview
Problem
Semiconductor devices face challenges in reducing inductance and improving dielectric withstanding voltage while maintaining heat dissipation performance, particularly in layouts with multiple drive wires and exposed substrate configurations.
Innovation Solution
The semiconductor device design includes a substrate with a semiconductor element containing SiC, where drive wires are spaced apart and connected to a drive pad in a configuration that increases the distance between the furthermost drive wires, and an insulation film with an opening to expose the drive electrode, along with an indent on the rear substrate surface to enhance creepage distance and encapsulation resin positioning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If drive wires are arranged close together to connect drive electrode and drive pad, then the number of wires is reduced, but inductance increases
Solution Approach 1:
The drive wire is divided into multiple segments (first drive wire and second drive wire) that are spaced apart from each other. This segmentation allows the current path to be distributed across multiple separated conductors rather than a single continuous wire, reducing the overall inductance while maintaining a manageable wire configuration
Solution Approach 2:
The drive wires are arranged in a three-dimensional configuration where they are spaced apart in the vertical dimension (thickness direction of substrate) rather than only in the planar dimension. This vertical separation creates a larger effective distance between the drive electrode and drive pad, reducing inductance without requiring excessive horizontal space
2Temperature
If substrate is exposed from rear surface of encapsulation resin to improve heat dissipation, then heat dissipation performance improves, but dielectric strength between drive terminal and substrate decreases
Solution Approach 1:
The encapsulation resin is selectively applied only to specific regions where dielectric strength is required (around the drive terminal area), while leaving other regions (where heat dissipation is critical) exposed. This creates different local properties: enclosed regions provide electrical insulation and high dielectric strength, while exposed regions provide thermal dissipation pathways
Data Source
AI summary
A semiconductor device includes a substrate including a main surface, a semiconductor element mounted on the main surface, a drive pad, and drive wires. The semiconductor element includes a front surface that faces in a same direction as the main surface and a drive electrode formed on the front surface and containing SiC. The drive wires are spaced apart from each other and connect the drive electrode to the drive pad. The drive wires include a first drive wire and a second drive wire configured to be a combination of furthermost ones of the drive wires. The first drive wire and the second drive wire are separated from each other by a greater distance at the drive pad than at the drive electrode as viewed in a first direction that is perpendicular to the main surface of the substrate.