SiC Drive Wire Layout for Low-Inductance Power Modules
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Solution Overview
Problem
Semiconductor devices face challenges in reducing inductance and improving dielectric withstanding voltage while maintaining heat dissipation performance, particularly in layouts with multiple drive wires and exposed substrates.
Innovation Solution
The semiconductor device design includes a substrate with a semiconductor element containing SiC, where drive wires are spaced apart and connected to a drive pad with increased distance, and an insulation film with openings to expose the drive electrode, and a substrate with an indent to increase the creepage distance, reducing inductance and enhancing dielectric strength without compromising heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If drive wires are arranged close to each other, then the device complexity is reduced, but the inductance between drive electrode and drive pad increases
Solution Approach 1:
The drive wires are arranged in a planar layout where the distance between wires varies in the second direction (lateral direction) rather than maintaining uniform spacing. The first drive wire and second drive wire are positioned closer to each other at the drive electrode side and farther apart at the drive pad side, creating a triangular or fan-shaped arrangement that reduces inductance while maintaining compact device footprint.
2Temperature
If the substrate is exposed from the rear surface of the encapsulation resin, then heat dissipation performance is improved, but dielectric strength between drive terminal and substrate deteriorates
Solution Approach 1:
The encapsulation resin is selectively positioned to cover only specific regions where dielectric strength is required (near the drive terminal), while leaving other regions of the substrate exposed for heat dissipation. This creates a non-uniform encapsulation structure that provides local electrical insulation where needed while maintaining thermal performance where required.
Data Source
AI summary
A semiconductor device includes a substrate including a main surface, a semiconductor element mounted on the main surface, a drive pad, and drive wires. The semiconductor element includes a front surface that faces in a same direction as the main surface and a drive electrode formed on the front surface and containing SiC. The drive wires are spaced apart from each other and connect the drive electrode to the drive pad. The drive wires include a first drive wire and a second drive wire configured to be a combination of furthermost ones of the drive wires. The first drive wire and the second drive wire are separated from each other by a greater distance at the drive pad than at the drive electrode as viewed in a first direction that is perpendicular to the main surface of the substrate.