Regenerated SiC Edge Ring Structure for Plasma Damage Reuse
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor manufacturing, edge rings in dry etching devices are frequently damaged by plasma, leading to increased waste and higher production costs due to the need for regular replacement, and existing methods do not efficiently regenerate or reuse these components.
Innovation Solution
A SiC edge ring with multiple deposition parts, including a plasma-damaged portion and non-damaged portions, where the boundary between these parts features an uneven surface, allowing for regeneration and reuse by forming new deposition parts on the damaged areas, thereby reducing waste and production costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the edge ring is regularly replaced when damaged by plasma, then the etching precision and product quality are maintained, but the production cost increases and industrial waste is generated
Solution Approach 1:
The patent applies the discarding and recovering principle by collecting plasma-damaged edge rings instead of disposing them, and regenerating new SiC layers on the damaged surfaces through chemical vapor deposition. This process recovers the edge ring components that would otherwise be discarded, converting waste materials into reusable parts while maintaining etching precision.
Solution Approach 2:
The patent converts the harmful plasma-damaged surface into a beneficial substrate for new SiC layer deposition. The damaged surface, which would normally require complete replacement, is instead used as a base for regenerating fresh SiC layers, transforming the harmful effect of plasma exposure into an opportunity for cost-effective restoration.
2Manufacturing precision
If the edge ring is regularly replaced when damaged by plasma, then the etching precision and product quality are maintained, but the production cost increases
Solution Approach 1:
The patent recovers value from damaged edge rings by regenerating SiC layers on them, avoiding the need to manufacture completely new edge rings. This recovery process significantly reduces production costs while maintaining the precision required for etching operations.
Solution Approach 2:
The patent performs preliminary regeneration of SiC layers on edge rings before they are fully discarded, preventing the need for complete replacement. This preliminary restoration action maintains etching precision while avoiding the higher costs associated with manufacturing new edge rings.
3Loss of substance
If a new SiC layer is formed on the plasma-damaged portion of the edge ring, then the edge ring can be reused reducing waste, but the deposition process complexity increases
Solution Approach 1:
The patent applies local quality by depositing new SiC layers specifically on the plasma-damaged portions of the edge ring rather than replacing the entire component. This localized regeneration approach reduces waste while keeping the deposition process manageable by focusing only on the affected areas.
4Manufacturing precision
If multiple SiC layers are stacked during deposition, then the regeneration quality is improved, but the risk of abnormal tissue growth and layer separation increases
Solution Approach 1:
The patent uses periodic action by interrupting the continuous deposition process to perform in-situ plasma etching at intermediate stages. This periodic etching removes abnormal tissues and prevents continuous growth of defective structures, ensuring layer stability while maintaining high regeneration quality through multiple stacked layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The SiC edge ring regeneration method allows for the reuse of damaged components, reducing industrial waste and production costs, while maintaining the quality of semiconductor products by forming new deposition parts on the damaged areas, achieving production efficiency comparable to replacing the edge ring with a new product.
Implementation Method 1
a boundary between the damaged portion of the first deposition part and the second deposition part includes an uneven surface formed by plasma-etching
Implementation Method 2
forming new deposition parts on the damaged areas
Data Source
AI summary
Described herein are edge ring among components for manufacturing semiconductors used in a semiconductor manufacturing process. The SiC edge ring includes: a first deposition part having a plasma-damaged portion and a non-damaged portion and including SiC; and a second deposition part formed on the first deposition part and including SiC, wherein a boundary between the damaged portion of the first deposition part and the second deposition part includes an uneven surface.