Silicon Carbide Electrode Contact Resistance Reduction
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Solution Overview
Problem
The challenge in manufacturing semiconductor devices is the high contact resistance between the semiconductor substrate and the electrode, particularly when using silicon carbide, due to oxidation caused by impurity gases like water vapor from the adhesive tape during the metal film formation process.
Innovation Solution
A method involving the use of an accommodating chamber to exhaust gases at elevated temperatures, reducing water vapor pressure, and forming metal layers while cooling the substrate to prevent oxidation, thereby reducing contact resistance and improving adhesion between electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If the semiconductor substrate is fixed on the adhesive tape during metal film formation, then the substrate can be easily handled and processed, but the contact resistance between the semiconductor substrate and the electrode increases due to oxidation by impurity gas from the adhesive tape
Solution Approach 1:
The process is divided into distinct stages: (1) fixing the substrate on the adhesive tape for easy handling, (2) removing the adhesive tape before metal film formation to eliminate oxidation, and (3) forming the metal film on the exposed substrate. This segmentation allows the substrate to benefit from easy handling during transport while preventing oxidation during the critical metal deposition process.
Solution Approach 2:
The adhesive tape is removed in advance before the metal film formation process begins. This preliminary action eliminates the source of impurity gas that would otherwise cause oxidation during sputtering, thereby preventing contact resistance increase before it occurs.
2Strength
If the adhesive tape is heated during sputtering to improve adhesion, then the bonding between substrate and tape is strengthened, but impurity gas is generated that oxidizes the metal film
Solution Approach 1:
The adhesive tape is completely removed from the system before the metal film formation process. This extraction eliminates the adhesive tape as a source of impurity gas, thereby preventing oxidation of the metal film while the substrate itself maintains sufficient adhesion for the manufacturing process.
Solution Approach 2:
The adhesive tape is removed in advance before heating and sputtering processes. This preliminary removal prevents the generation of impurity gas that would otherwise occur when heating the adhesive tape, thereby eliminating oxidation of the metal film before it can occur.
3Stability of the object's composition
If the metal film is formed on the substrate fixed on adhesive tape, then the substrate remains stable during processing, but the contact resistance increases due to oxidation during annealing
Solution Approach 1:
The processing steps are segmented such that the substrate is fixed on the adhesive tape only for transport and initial positioning, then the tape is removed before metal film formation and annealing. This allows the substrate to be stable during handling while being exposed and accessible during the critical metal deposition and heat treatment processes.
Solution Approach 2:
The adhesive tape is removed in advance before the metal film formation and annealing processes. This preliminary removal ensures that no impurity gas is generated during these critical steps, thereby preventing oxidation of the metal film and electrode during annealing while the substrate remains stable through proper fixation methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively minimizes contact resistance and enhances adhesion between electrodes, leading to improved performance and yield in silicon carbide semiconductor devices.
Implementation Method 1
the gas is exhausted from the accommodating chamber while maintaining a temperature of the adhesive tape at 100° C. or more. Accordingly, liquid water contained in or adhered to the adhesive tape is vaporized into water vapor and the water vapor is exhausted from the accommodating chamber
Implementation Method 2
A temperature of the semiconductor substrate is reduced after the step of exhausting the gas from the accommodating chamber
Data Source
AI summary
A method for manufacturing a semiconductor device includes the following steps. A semiconductor substrate is prepared which has a first main surface and a second main surface opposite to each other. The semiconductor substrate is fixed on an adhesive tape at the first main surface. The semiconductor substrate fixed on the adhesive tape is placed in an accommodating chamber. While maintaining a temperature of the adhesive tape at 100° C. or more, a gas is exhausted from the accommodating chamber. After the step of exhausting the gas from the accommodating chamber, a temperature of the semiconductor substrate is reduced. After the step of reducing the temperature of the semiconductor substrate, an electrode is formed on a second main surface of the semiconductor substrate. In this way, there can be provided a method for manufacturing a semiconductor device so as to achieve reduced contact resistance between a semiconductor substrate and an electrode.