SiC-Dispersed Electrostatic Chuck Ceramic for Uniform Wafer Cooling
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Solution Overview
Problem
Semiconductor manufacturing apparatuses face challenges in achieving high temperature uniformity and deep drilling processing while minimizing ion scattering, requiring a balance between high dielectric constant and low dielectric loss tangent in electrostatic chuck devices.
Innovation Solution
A composite sintered body comprising metal oxide and silicon carbide, with silicon carbide dispersed in the metal oxide, is used to form the electrostatic chuck member, offering a high dielectric constant and low dielectric loss tangent, achieved through a specific production method involving pH adjustment and pressure-sintering.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the gas pressure of the refrigerant is increased to improve cooling efficiency, then temperature uniformity is improved, but the electrostatic chuck device requires higher adsorption force to prevent wafer detachment
Solution Approach 1:
The patent changes the material parameter of the base by incorporating silicon carbide particles into the aluminum oxide ceramic matrix. This compositional parameter change increases the dielectric constant of the base material, which directly enhances the electrostatic adsorption force without requiring increased gas pressure, thus resolving the contradiction between cooling efficiency and adsorption force requirements
Solution Approach 2:
The patent employs a composite material structure consisting of aluminum oxide ceramic matrix with dispersed silicon carbide particles. This composite approach combines the high dielectric constant properties of both materials, achieving enhanced electrostatic adsorption capability while maintaining the structural integrity and thermal management performance of the original ceramic base
2Manufacturing precision
If the frequency of bias voltage is reduced to enable deep drilling processing, then ion scattering is suppressed, but the electrical characteristics of the ceramic base change due to increased dielectric loss tangent
Solution Approach 1:
The patent modifies the electrical parameter of the base material by adding silicon carbide particles to the aluminum oxide ceramic. This compositional change fundamentally alters the dielectric characteristics, reducing the dielectric loss tangent at low frequencies and enabling the system to operate at reduced bias voltage frequencies for deep drilling without excessive energy loss or heat generation
3Force
If a ceramic sintered body with high dielectric constant is used to increase adsorption force, then wafer fixation is improved, but the dielectric loss tangent increases causing heat generation
Solution Approach 1:
The patent uses a composite material system where silicon carbide particles (with appropriate dielectric properties) are dispersed in an aluminum oxide ceramic matrix. This composite structure achieves a balanced dielectric profile that provides high adsorption force through increased dielectric constant while the specific composition and distribution of silicon carbide particles keep the dielectric loss tangent low, preventing excessive heat generation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composite sintered body provides improved temperature uniformity and reduced ion scattering, enabling efficient deep drilling processing with enhanced electrical characteristics and mechanical strength.
Implementation Method 1
crystal grains of the silicon carbide are dispersed in crystal grains of the metal oxide or at crystal grain boundaries of the metal oxide
Implementation Method 2
an electrostatic attraction electrode that generates an electrostatic force (Coulomb's force) between a base having one principal surface which is a pacing surface on which the wafer is placed, and the wafer placed on the placing surface
Implementation Method 3
a technique for cooling a wafer placed on a sample stage by providing minute grooves in the sample stage and making a gas refrigerant (for example, helium) flow in the grooves
Implementation Method 4
a step of pressure-sintering the obtained formed body by heating the formed body to a temperature of 1600° C. or higher while compacting the formed body with a pressure of 25 MPa or more under a non-oxidative atmosphere
Data Source
AI summary
A composite sintered body is a ceramic composite sintered body which includes metal oxide which is a main phase, and silicon carbide which is a sub-phase, in which crystal grains of the silicon carbide are dispersed in crystal grains of the metal oxide and at crystal grain boundaries of the metal oxide, and a proportion of the crystal grains of the silicon carbide dispersed in the crystal grains of the metal oxide is 25% or more in an area ratio with respect to a total crystal grains of the silicon carbide.