SiC Epitaxial Platforms on Silicon for Larger Wafer Production
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Solution Overview
Problem
The production of silicon carbide (SiC) wafers is challenging due to their hardness, limited maximum wafer size, and high production costs, which restricts the die production volume and increases costs for SiC-based semiconductor devices.
Innovation Solution
The development of SiC platforms using Si as the seed layer for epitaxial growth, allowing for larger wafer sizes and higher die production volumes, while reducing production costs through faster and easier manufacturing processes compared to traditional SiC boule production methods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If traditional SiC boule production methods are used, then SiC wafers can be produced, but the wafer size is limited and production costs are high
Solution Approach 1:
The patent uses silicon (Si) as an intermediary substrate to grow silicon carbide (SiC) epitaxial layers. This mediator approach allows the use of inexpensive, large-diameter silicon wafers as starting material, which then serve as the foundation for SiC layer growth through epitaxial processes, thereby enabling larger final wafer sizes at lower costs
Solution Approach 2:
The patent changes the fundamental growth parameter from growing SiC on SiC substrates to growing SiC on Si substrates. This parameter change in the substrate material enables access to larger, cheaper silicon wafer inventories while maintaining the desired SiC crystal structure and properties through controlled epitaxial growth conditions
2Productivity
If traditional SiC boule production methods are used, then SiC wafers can be produced, but the production time is long and die production volume is limited
Solution Approach 1:
The patent performs preliminary preparation of large-diameter silicon wafers before epitaxial growth, including surface cleaning, oxidation, and patterning of sacrificial regions. This preliminary action on the Si substrate enables faster subsequent SiC epitaxial growth and facilitates higher die yield per wafer, thereby increasing overall productivity and reducing the time required to produce marketable SiC devices
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The SiC platforms with Si seed layers enable larger wafer sizes and higher die production volumes, resulting in lower production costs and increased efficiency in manufacturing SiC-based semiconductor devices.
Implementation Method 1
a SiC epitaxial layer formed by epitaxy on the Si seed layer
Data Source
AI summary
A method of manufacturing a silicon-carbide platform comprises providing a base comprising a silicon seed layer having a (001) crystal lattice plane and a top surface parallel to the (001) crystal lattice plane and forming a silicon-carbide epitaxial layer by epitaxial growth directly on the top surface of the silicon seed layer. A silicon-on-insulator substrate may be used to form the silicon-carbide platform in some implementations. The silicon-carbide epitaxial layer may be grown by epitaxial lateral overgrowth over a mask layer in some implementations. The silicon-carbide platform may comprise additional layers, such as a Ill-V semiconductor layer disposed on and bonded to the silicon-carbide epitaxial layer in some implementations. The silicon-carbide epitaxial layer may be buried between two other layers in some implementations.