SiC FET Proton Doping for Dielectric Interface Trap Reduction
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Solution Overview
Problem
Silicon carbide field-effect transistors (SiC FETs) face performance issues due to interface trap defects at the dielectric material and semiconductor interface, which reduce reliability and affect electrical properties.
Innovation Solution
Proton doping, specifically implanting hydrogen ions (H+) along the interface between the dielectric material and silicon carbide semiconductor, reduces defect density and improves electrical performance by filling inherent point defects and increasing charge density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional SiC FET fabrication is used, then device structure is formed, but interface trap defects reduce reliability and electrical performance
Solution Approach 1:
Proton doping is performed as a preliminary action before final device operation to pre-reduce interface trap defects at the dielectric-semiconductor interface. The proton implantation is carried out at specific energy levels (5-100 keV) and fluence (10^10 to 10^15 H+/cm²) to fill inherent point defects and reduce trap density before the device is put into service, thereby improving reliability without affecting the formed device structure
Solution Approach 2:
The invention changes the physical and chemical parameters of the interface region through proton doping. By controlling proton energy, fluence, and implantation temperature, the defect density at the dielectric-semiconductor interface is modified. This parameter change reduces interface trap defects while maintaining the structural integrity of the SiC FET device
2Duration of action of moving object
If interface defects are present, then device fabrication is simpler, but carrier lifetime is reduced and electrical properties deteriorate
Solution Approach 1:
Proton doping is applied as a preliminary treatment to fill interface defects before they can capture carriers during device operation. This preliminary action reduces the density of trap states at the dielectric-semiconductor interface, thereby extending carrier lifetime and improving electrical properties such as transconductance and reducing gate leakage current
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces interface trap defects, enhances carrier lifetime, and improves electrical properties such as gate leakage current and transconductance, thereby increasing the performance of SiC FET devices.
Implementation Method 1
A plurality of protons are implanted into a region of the volume of SiC semiconductor material adjacent to the plurality of field-effect transistor structures to create a proton doped region
Implementation Method 2
Proton doping may be performed prior to or after the introduction of the gate oxide. Examples advantageously improve the performance of SiC FET devices with high blocking voltages by reducing the defect density, reducing the capture of carriers by defects during switching, and increasing the charge density
Data Source
AI summary
A silicon carbide field-effect transistor is doped with protons to reduce interface defects, and a method of proton doping a silicon carbide field-effect transistor is provided to reduce interface defects. Various FET structures (e.g., source, body, well) may be implanted in a drift region at a first end of a volume of semiconductor material. A drain may be provided (e.g., at a second end of the volume of semiconductor material). In a first example, protons (H+ ions) may be implanted to create a doped region at the first end prior to depositing a dielectric material associated with a gate. The resulting doped interface region underlying the dielectric material exhibits a reduction in trapped charges. In a second example, the dielectric material is deposited prior to proton implantation. The resulting doped interface region exhibits the reduction in trapped charges, and the dielectric material exhibits a reduction in mobile ionic charges.