SiC Freestanding Film Structure Using Inverted Substrate Molding
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Solution Overview
Problem
The existing SiC Freestanding Film Structures formed through chemical vapor deposition have uneven film thickness due to substrate irregularities, leading to shape mismatches and reduced strength in narrow areas, affecting product accuracy and functionality.
Innovation Solution
A SiC Freestanding Film Structure is formed using a female-molded substrate with inverted unevenness, allowing precise deposition of a SiC layer with a functional surface that matches the substrate shape, featuring sharper corners and minute protrusions for improved accuracy and strength, eliminating the need for post-processing treatments.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a SiC film is deposited on an uneven substrate surface through CVD, then the film forms a functional surface, but the film thickness becomes uneven and the shape accuracy deteriorates
Solution Approach 1:
The patent applies inversion by creating a female-molded substrate with inverted unevenness opposite to the desired functional surface shape. The substrate surface is intentionally formed with protrusions and recesses that are the reverse of the target shape, so that when SiC film is deposited uniformly, the film's outer surface automatically forms the desired shape with high accuracy. This resolves the contradiction by transforming the substrate preparation complexity into a precise molding process while achieving uniform film deposition.
Solution Approach 2:
The patent applies preliminary action by pre-forming the substrate with inverted unevenness before film deposition. The female-molded substrate is prepared in advance with the exact reverse geometry of the desired functional surface, including precise protrusions and recesses. This preliminary substrate preparation ensures that subsequent uniform SiC film deposition automatically produces the target shape, eliminating the need for complex in-situ shape control during deposition.
2Strength
If the film thickness is increased to improve strength in narrow portions, then the strength improves, but the shape accuracy and surface smoothness deteriorate
Solution Approach 1:
The patent resolves this contradiction by inverting the substrate geometry. The female-molded substrate with inverted unevenness ensures that even when thick SiC film is deposited for strength, the film's outer surface maintains high smoothness and shape accuracy. The substrate's pre-formed reverse geometry acts as a master template, ensuring that the film thickness increases uniformly while the functional surface remains smooth and accurately shaped.
3Shape
If a substrate with complicated surface shape is used, then the desired shape can be achieved, but the film thickness in deep portions is reduced
Solution Approach 1:
The patent applies inversion by creating a female-molded substrate where the protrusions and recesses are the reverse of the desired functional shape. This ensures that deep portions of the functional surface correspond to protrusions on the substrate, which receive adequate SiC film deposition. The inverted geometry prevents film thickness reduction in what would otherwise be deep or narrow regions, as the substrate geometry guides uniform film formation across all areas.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution ensures high accuracy and strength of the functional surface by matching the substrate shape and allowing increased film thickness without affecting surface smoothness, enabling precise tooling and handling of complex shapes.
Implementation Method 1
a SiC layer is formed on an uneven surface of a substrate having unevennesses through a vapor deposition type film formation method
Implementation Method 2
a SiC film is formed on a surface of the substrate formed of carbon (graphite) or the like through a chemical vapor deposition (CVD) method
Implementation Method 3
the substrate is burned out by heating the substrate subjected to the deposition under a high-temperature oxidation atmosphere
Data Source
AI summary
A SiC Freestanding Film Structure capable of preventing a functional surface of a SiC Freestanding Film Structure from being affected by a film thickness and improving strength by increasing the film thickness, the SiC Freestanding Film Structure is formed by depositing a SiC layer through a vapor deposition type film formation method. The SiC layer is deposited with respect to a first SiC layer serving as a functional surface in the SiC Freestanding Film Structure. Focusing on the functional surface and a non-functional surface positioned on front and back sides of any particular portion, the functional surface has smoothness higher than that of the non-functional surface.