SiC Trench Resistor Gate Layout for Electric Field Control
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Solution Overview
Problem
Current semiconductor devices with trench structures face challenges in optimizing the layout and configuration of trench gate structures, source structures, and well regions to enhance performance and reliability, particularly in wide bandgap semiconductor materials like SiC, where precise control of impurity concentrations and layout is crucial for efficient operation.
Innovation Solution
The semiconductor device incorporates a specific layout and configuration of trench gate structures, source structures, and well regions in a SiC chip, including detailed dimensions and orientations of trench structures, insulating films, and embedded electrodes, along with a resistive film and dummy structures to manage electric fields and improve withstand voltage, specifically tailored for SiC materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If trench structures are formed in the semiconductor substrate to improve device performance, then channel control and breakdown voltage are enhanced, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The device is divided into multiple regions with different impurity concentrations (first impurity concentration in the channel region, second impurity concentration in the drift region). This segmentation allows independent optimization of channel control and breakdown voltage characteristics, resolving the contradiction between device performance and structural complexity.
Solution Approach 2:
Different regions of the semiconductor device are assigned different local properties: the channel region has a first impurity concentration optimized for carrier control, while the drift region has a second impurity concentration optimized for high breakdown voltage. This local quality differentiation enables simultaneous achievement of good channel control and high reliability without requiring complex overall structure.
2Productivity
If precise control of impurity concentrations is implemented to enhance device performance, then channel control and efficiency are improved, but manufacturing precision requirements increase
Solution Approach 1:
The invention specifies concrete parameter ranges for impurity concentrations (first impurity concentration: 1×10^16 to 1×10^18 atoms/cm³, second impurity concentration: 1×10^15 to 1×10^17 atoms/cm³). By defining these parameter ranges, the invention balances manufacturing feasibility with device performance, allowing efficient production while maintaining good channel control characteristics.
Data Source
AI summary
A semiconductor device includes a chip that has a main surface, a gate resistor that includes a trench resistor structure formed in the main surface, a gate pad that has a lower resistance value than the trench resistor structure and is arranged on the main surface such as to be electrically connected to the trench resistor structure, and a gate wiring that has a lower resistance value than the trench resistor structure and is arranged on the main surface such as to be electrically connected to the gate pad via the trench resistor structure.