Silicon Carbide Heat Sink Structure for High-Power Laser Chip Cooling

The patent changes the substrate material from aluminum nitride (thermal conductivity 200 W/(m·K)) to silicon carbide (thermal conductivity greater than 390 W/(m·K)), achieving a nearly twofold increase in thermal conductivity. This parameter change enables the heat sink to handle high-power laser chips exceeding 30W by providing sufficient heat dissipation efficiency while maintaining structural integrity.

The patent replaces the traditional high-temperature sintering process with electroplating technology. Instead of using thermal energy to bond copper foil to the silicon carbide substrate, an electrochemical plating process is employed that deposits copper layers at lower temperatures. This substitution preserves material performance while achieving reliable copper-substrate bonding, eliminating the performance degradation caused by excessive heat exposure.

The patent replaces the wet chemical etching method with a photoresist-based patterning process. Circuit patterns are formed by applying photoresist, exposing, developing, and etching only the exposed areas. This approach provides precise control over copper layer removal, preventing excessive corrosion and maintaining copper layer integrity even when etching thick copper layers, while still enabling complex circuit pattern formation.

The patent employs electroplating technology that naturally produces vertical copper layer side surfaces through controlled electrochemical deposition. The electroplating process, using appropriate plating solutions and current density control, achieves uniform vertical walls without requiring complex mechanical or chemical etching steps. This vertical geometry optimizes heat dissipation by maximizing surface area for heat transfer while maintaining manufacturing simplicity through the self-organizing nature of electroplating.