SiC Hybrid Power Module Balancing Voltage, Current, and Cost
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Solution Overview
Problem
There is a need for power modules incorporating silicon carbide power semiconductor devices that can handle high voltages and currents while maintaining high efficiency, a small footprint, and low cost.
Innovation Solution
The power module design includes silicon carbide insulated gate bipolar transistors (IGBTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) arranged in specific configurations to achieve high blocking voltages, forward and reverse conduction currents, and reduced switching and conduction losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If silicon carbide power semiconductor devices are used to handle high voltages and currents, then blocking voltage and conduction current are improved, but manufacturing cost increases
Solution Approach 1:
The patent combines IGBT and MOSFET devices into a single hybrid power module with shared substrates and interconnect structures. This integration reduces the overall number of discrete components, simplifies packaging, and lowers manufacturing costs while maintaining the high voltage and current handling capabilities of silicon carbide devices
Solution Approach 2:
The hybrid power module design allows the same physical module to perform multiple functions - both IGBT-based switching and MOSFET-based rectification - within a single integrated package. This multi-functionality reduces the total component count and system complexity, thereby reducing manufacturing costs
2Loss of energy
If silicon carbide power semiconductor devices are used, then efficiency is improved, but device complexity increases
Solution Approach 1:
The patent segments the power conversion function into distinct IGBT and MOSFET sections within the module, allowing each device type to be optimized for its specific function. This segmentation enables simplified control strategies where each section can be independently managed, reducing overall system complexity despite the advanced materials used
Solution Approach 2:
The invention utilizes the inherent electrical parameter differences between IGBT and MOSFET devices - specifically their complementary switching and conduction characteristics - to achieve high efficiency. By selecting device parameters that are naturally suited for their respective functions, the design reduces the need for complex external circuitry and control mechanisms
3Area of stationary object
If compact footprint is maintained, then space utilization is improved, but heat dissipation becomes more difficult
Solution Approach 1:
The invention transitions from a two-dimensional planar layout to a three-dimensional stacked architecture, utilizing vertical space to accommodate multiple device layers. This dimensional change allows compact footprint while providing multiple thermal conduction paths from internal devices to external heat dissipation structures
Data Source
Figure 1
Figure 2A~2B
Figure 2C
AI summary
A power module includes a plurality of power semiconductor devices. The plurality of power semiconductor devices includes an insulated gate bipolar transistor (IGBT) and a metal-oxide-semiconductor field-effect transistor (MOSFET) coupled in parallel between a first power switching terminal and a second power switching terminal. The IGBT and the MOSFET are silicon carbide devices. By providing the IGBT and the MOSFET together, a tradeoff between forward conduction current and reverse conduction current of the power module, the efficiency, and the specific current rating of the power module may be improved. Further, providing the IGBT and the MOSFET as silicon carbide devices may significantly improve the performance of the power module.