SiC Ingot Crucible Lid Non-Right Angle Guiding Structures

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Solution Overview

Problem

Conventional physical vapor transport methods for growing silicon carbide (SiC) ingots face challenges due to pressure differences causing the lid to float and improperly engage with the crucible, affecting crystal growth quality and yield.

Innovation Solution

An apparatus featuring a crucible and lid with non-right angle guiding structures, such as chamfers or arcs, that self-align and engage securely after the vacuuming process, ensuring proper contact and reducing defects in ingot growth.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the crucible device is used in the PVT method, then the crystal growth rate is fast and the operation is simple, but the lid floats due to pressure difference during vacuuming and drops onto the crucible causing improper contact

Engineering Contradiction:
Improvecrystal growth rateVSAvoidcontact precision between lid and crucible
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies preliminary action by providing guiding parts (annular first guiding part on the crucible and annular second guiding part on the lid) before the vacuuming process begins. These guiding parts are pre-positioned to ensure that when the lid drops after floating during vacuuming, it automatically aligns and contacts the crucible properly along the guiding surfaces, preventing improper contact and crystal defects.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If the lid is allowed to float during vacuuming, then the pressure difference is relieved, but the lid drops onto the crucible causing improper contact and affecting crystal quality

Engineering Contradiction:
Improvepressure equalizationVSAvoidengagement accuracy of lid and crucible
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent uses the guiding parts as an intermediary mechanism between the lid and crucible. During vacuuming, when the lid floats and then drops, the guiding parts (annular first guiding part and annular second guiding part) act as intermediaries that guide the lid's movement and ensure proper alignment and contact with the crucible, preventing direct improper impact contact.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Ease of manufacture

If conventional right angle structures are used for the lid and crucible, then the manufacturing is simple, but the lid and crucible do not match tightly after vacuuming

Engineering Contradiction:
Improvestructural simplicityVSAvoidengagement precision of lid and crucible
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies asymmetry by changing the conventional right angle structure of the lid and crucible engagement surfaces to non-right angle guiding parts. The annular first guiding part and annular second guiding part are configured with specific angles and shapes that are asymmetric relative to each other, enabling them to mate together in a specific orientation that ensures tight engagement and proper alignment when the lid contacts the crucible after vacuuming.

Inventive Principle:
Principle #4Asymmetry

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enhances the quality and yield of ingot growth by ensuring consistent engagement of the lid and crucible, increasing single crystal formation from 50%-60% to 90%-100% and reducing defects, thereby improving the overall ingot growth process and reducing costs.

Implementation Method 1

a pressure difference across a wall of the crucible exists at an initial stage of vacuuming the chamber, from which the lid may be forced to float due to a depressurization of the process

Methodology Applied
Scientific EffectPressure difference: Pressure Gradient

Implementation Method 2

the crucible device may be heated to a preset temperature (for example, above 2,000° C.), the SiC powders are sublimated into various SiC molecules arise to be further attached or deposited onto the seed for forming a SiC crystal

Methodology Applied
Scientific EffectSublimation: Sublimation

Implementation Method 3

After the chamber is evacuated and then heated

Methodology Applied
Scientific EffectVacuuming: Vacuum

Data Source

PatentUS20240191397A1Apparatus for producing ingot
Publication Date: 2024.06.13 IND TECH RES INST
  • US20240191397A1 patent drawing
  • US20240191397A1 patent drawing
  • US20240191397A1 patent drawing

AI summary

An apparatus for producing an ingot includes a crucible and a lid. The crucible, as a cylindrical container for accommodating a raw crystal-growing material, has an annular top edge further having an annular non-90° first guiding part. The lid provides a bottom for disposing a seed, and the bottom is furnished thereon a bottom protrusion. An outer wall of the bottom protrusion is furnished with an annular non-90° second guiding part corresponding to the first guiding part. The lid is detachable to cover the crucible by having the bottom protrusion to fit the annular the main inner wall, the first guiding part and the annular second guiding part to contact each other, and a portion of the bottom of the lid surrounding the bottom protrusion to contact the top edge of the crucible.